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The BFR92PE6530HTSA1 is an NPN silicon RF bipolar junction transistor manufactured by Infineon Technologies. It is housed in a surface-mount SOT-23 package with three pins. The device features a maximum collector-emitter voltage (VCEO) of 15 V and a collector-base voltage (VCBO) of 20 V. It supports a maximum DC collector current (IC) of 45 mA and has a maximum power dissipation (Pd) of 280 mW. Key electrical parameters include a minimum DC current gain (hFE) of 70, a maximum emitter-base voltage (VEBO) of 2.5 V, and a transition frequency (ft) of 5000 MHz. The component operates at temperatures up to 150°C and is qualified under the AEC-Q100 automotive standard.
Verify the specific ordering suffix against official Infineon documentation to confirm tape-and-reel quantities and packaging variations. Ensure that the procurement channel provides valid traceability records for automotive-grade components. Cross-reference the part number with the manufacturer's latest lifecycle status to confirm availability before finalizing supply agreements.
Select this component when designing circuits requiring high-speed switching or RF amplification within a low-voltage environment. The SOT-23 package is appropriate for automated surface-mount assembly processes. Consider the thermal constraints imposed by the 280 mW power dissipation limit during continuous operation in enclosed spaces.
This part belongs to the BFR92P series of small-signal RF transistors from Infineon. These components are engineered for high-frequency stability and linearity. The series is widely utilized in wireless infrastructure and mobile handset designs where compact form factors and reliable RF performance are critical requirements.
Consult the official Infineon cross-reference guide for verified substitutes. Generic equivalents may not match the specific AEC-Q100 qualification or the precise ft characteristics required for RF applications.