BFR93AW135

Overview

The BFR93AW135 is a silicon NPN bipolar RF transistor manufactured by NXP Semiconductors. It is designed for wideband applications up to 5 GHz and is encapsulated in a plastic SOT-323 (S-mini) surface-mount package. The device shares the same crystal structure as the SOT-23 version, BFR93A. Key electrical specifications include a maximum collector-emitter voltage of 12V, a collector current of 35mA, and a power dissipation rating of 300mW.

Feature Summary

• Wideband operation capability extending to 5 GHz frequency range
• NPN silicon construction optimized for RF signal processing
• Compact SOT-323 surface-mount packaging for space-constrained designs

Applications

• RF amplifier circuits
• Wideband signal processing systems
• High-frequency communication modules

Procurement Notes

Verify the complete part number including the trailing suffix to ensure correct tape-and-reel configuration. Confirm that the SOT-323 package variant matches the design requirements. Cross-reference the manufacturer datasheet for specific thermal and electrical limits before integration into final assemblies.

Selection Notes

Select this component when a small-form-factor NPN transistor is required for frequencies up to 5 GHz. The SOT-323 package offers a compact footprint suitable for dense PCB layouts. Ensure the application voltage and current do not exceed the 12V and 35mA ratings respectively.

Part Context

This component belongs to the BFR93 series of wideband transistors from NXP. It serves as the surface-mount equivalent to the through-hole BFR93A, maintaining identical internal crystal characteristics while adapting to modern assembly methods via the SOT-323 housing.

Replacement Considerations

The BFR93A is the direct through-hole counterpart with identical internal structure. Verify pinout compatibility and thermal performance when substituting between SOT-323 and SOT-23 packages.