BFS 17P E6433

Overview

The BFS17P is an NPN silicon RF transistor designed for sub-GHz applications. It operates with a maximum collector-emitter voltage of 15 V and a continuous collector current of 25 mA, dissipating up to 280 mW. The device features a transition frequency (fT) of 1.4 GHz at 2 mA bias and 2.5 GHz at 25 mA. Key RF performance metrics include a minimum noise figure of 3.5 dB at 800 MHz, a third-order output intercept point (OIP3) of 21.5 dBm, and a 1 dB compression point of 10 dBm. Packaged in SOT-23, it supports ambient temperatures from -65 °C to +150 °C.

Feature Summary

• Optimized for broadband amplification within the sub-GHz frequency range
• Provides low noise figure characteristics suitable for sensitive receiver front-ends
• Delivers high linearity indicated by specific OIP3 and P-1dB ratings

Applications

• Broadband amplifiers operating up to 1 GHz
• Mixers in sub-GHz communication systems
• Oscillators in sub-GHz frequency bands

Procurement Notes

Verify the exact ordering code against the manufacturer's official documentation before purchase. Confirm that the component meets RoHS compliance requirements if necessary for your assembly process. Ensure handling precautions are observed due to electrostatic discharge sensitivity. Check the latest datasheet revision for any updates to thermal resistance or electrical limits prior to finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring an NPN silicon RF transistor for sub-GHz frequencies. Consider the 15 V collector-emitter voltage limit and 25 mA current capability during biasing calculations. Evaluate the 280 mW power dissipation against your thermal management strategy. Verify that the SOT-23 package dimensions fit your PCB layout constraints and that the transition frequency meets your signal processing needs.

Part Context

The BFS17P belongs to Infineon Technologies' portfolio of NPN silicon RF transistors. It is specifically engineered for radio frequency applications below 1 GHz. The device utilizes standard silicon technology housed in a compact surface-mount package. It serves as a fundamental active component for signal conditioning and generation in wireless communication hardware.

Replacement Considerations

Consult the official Infineon replacement guide for verified substitute part numbers. Do not assume functional equivalence based solely on package type or general specifications. Verify pinout compatibility and electrical parameters against the original datasheet before implementing any alternative components in the design.

FAQ

What is the transition frequency of the BFS17P?

The transition frequency is 1.4 GHz at a collector current of 2 mA and 5 V collector-emitter voltage. It increases to 2.5 GHz at a collector current of 25 mA under the same voltage conditions.

What is the minimum noise figure specification?

The minimum noise figure is specified as 3.5 dB at a frequency of 800 MHz, with a collector current of 2 mA and a collector-emitter voltage of 5 V.

What are the maximum voltage ratings?

The maximum collector-emitter voltage is 15 V, the maximum collector-base voltage is 25 V, and the maximum emitter-base voltage is 2.5 V.