BFS 360L6 E6327

Overview

The BFS 360L6 E6327 is an NPN silicon RF transistor featuring two integrated transistors in a TSLP-6-1 package. It supports low voltage and low current operation with a collector-emitter voltage of 6 V and maximum collector current of 35 mA. The device provides a transition frequency of 14 GHz and a noise figure of 1.0 dB at 1.8 GHz. Total power dissipation is rated at 210 mW, with a junction temperature limit of 150 °C.

Feature Summary

• Integrated dual-transistor configuration for compact circuit design
• Optimized for low noise amplification applications
• Capable of oscillator performance up to 3.5 GHz with output power exceeding 10 dBm

Applications

• Low noise amplifier circuits
• RF oscillators operating up to 3.5 GHz
• Low voltage signal processing systems

Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm the specific ordering suffix matches project requirements. Review the latest datasheet for any updates regarding handling precautions and thermal resistance parameters before integration.

Selection Notes

Select this component for designs requiring integrated dual-transistor functionality within a small surface-mount footprint. Ensure the biasing network accommodates the 6 V collector-emitter voltage limit and 210 mW power dissipation rating under expected ambient conditions.

Part Context

This part belongs to Infineon's BFR/BFS series of silicon RF transistors designed for high-frequency applications. The BFS variant specifically integrates multiple die structures to reduce board space while maintaining RF performance metrics suitable for communication equipment.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pin compatibility and electrical specifications if considering alternative components from other manufacturers.