BFS 380L6 E6327

BFS 380L6 E6327

$0.16
  • Description:RF TRANS 2 NPN 9V 14GHZ TSLP-6-1
  • Series:-

SKU:329f6f6a93cd Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS 2 NPN 9V 14GHZ TSLP-6-1
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Transistor Type:2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max):9V
  • Frequency - Transition:14GHz
  • Noise Figure (dB Typ @ f):1.3dB ~ 1.9dB @ 1.8GHz ~ 3GHz
  • Gain:8dB ~ 12dB
  • Power - Max:380mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 40mA, 3V
  • Current - Collector (Ic) (Max):80mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-XFDFN
  • Supplier Device Package:TSLP-6-1
  • Grade:-
  • Qualification:-

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BFS 380L6 E6327

Overview

The BFS380L6 is an NPN silicon RF transistor designed for high current capability and low noise figure applications. It features a TSLP-6-1 package with two integrated transistors. Key electrical parameters include a collector-emitter breakdown voltage of 6 V, a transition frequency of 14 GHz, and a maximum power dissipation of 380 mW. At 1.8 GHz, it achieves a minimum noise figure of 1.1 dB and a maximum available power gain of 12 dB. The device operates with a collector current up to 80 mA and supports low voltage operation, making it suitable for wide dynamic range circuits.

Feature Summary

  • Built-in dual transistor configuration within a single package
  • Low noise figure performance optimized for oscillator applications
  • High current capability supporting wide dynamic range usage
  • Low voltage operation suitability for modern RF systems

Applications

  • Low phase noise oscillators up to 3.5 GHz
  • Wide dynamic range amplifier stages
  • Low noise amplifier (LNA) front-ends
  • RF signal processing in mobile communication devices

Procurement Notes

Verify the specific ordering suffix E6327 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with ESD handling precautions as the device is electrostatic discharge sensitive. Cross-reference the pinout configuration with the TSLP-6-1 package diagram during PCB layout to prevent misalignment.

Selection Notes

Select this component when designing circuits requiring low noise figures at frequencies around 1.8 GHz to 3 GHz. Consider the 6 V collector-emitter breakdown voltage limit for supply rail design. Evaluate the thermal resistance of 140 K/W for heat dissipation requirements in compact layouts. Verify impedance matching networks against the specified S-parameter data for optimal gain and stability.

Part Context

This part belongs to Infineon's BFS series of NPN silicon RF transistors. It utilizes a TSLP-6-1 surface mount package. The internal structure integrates two die, identified as BFR380L3, to provide dual functionality in a minimal footprint. This integration aids in reducing board space while maintaining high-frequency performance characteristics typical of the series.

Replacement Considerations

Check for direct substitutes within the BFS or BFR series that share the TSLP-6-1 package and similar electrical ratings. Verify pin-to-pin compatibility and ensure replacement parts meet the same noise figure and transition frequency requirements. Consult official cross-reference lists for validated alternatives.

BFS 380L6 E6327BFS 380L6 E6327
$0.16
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