BFS 386L6 E6327

Overview

The BFS386L6 is an NPN silicon RF transistor in a TSLP-6-1 package, integrating two distinct transistors (TR1 and TR2) on separate dies. It supports low voltage and low current operation for applications up to 3.5 GHz. Key electrical parameters include a collector-emitter breakdown voltage of 6 V and transition frequencies of 14 GHz for both devices. Noise figures are specified at 1.0 dB for TR1 and 1.1 dB for TR2 at 1.8 GHz. Maximum available power gains reach 14.5 dB for TR1 and 12 dB for TR2 at 1.8 GHz.

Feature Summary

• Integrated dual-transistor design with separate die configurations for optimized performance
• Low noise figure characteristics suitable for sensitive amplifier stages
• Capable of oscillator operation with output power exceeding 10 dBm up to 3.5 GHz

Applications

• Low noise amplifiers
• Oscillators operating up to 3.5 GHz
• Low voltage RF circuits requiring low current consumption

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm pinout and marking consistency. Ensure handling precautions for electrostatic discharge are followed during storage and assembly. Confirm thermal resistance values align with the specific PCB soldering point measurements provided in the datasheet.

Selection Notes

Select this component when dual NPN RF transistors are required in a compact surface-mount package. Consider TR1 for lower current bias points and TR2 for higher current capabilities. Evaluate noise figure requirements at 1.8 GHz and 3 GHz to determine suitability for specific frequency bands.

Part Context

This device belongs to Infineon's portfolio of NPN silicon RF transistors designed for high-frequency applications. The TSLP-6-1 package allows for efficient space utilization in mobile and wireless communication devices. The integration of two transistors facilitates balanced circuit designs without increasing board footprint.

Replacement Considerations

TR1 utilizes a BFR360L3 die and TR2 utilizes a BFR380L3 die. Verify compatibility if substituting individual transistor functions within a larger system architecture.