BFS 483 E6327

Overview

The BFS 483 E6327 is a low noise silicon bipolar RF transistor manufactured by Infineon Technologies. It integrates two galvanically isolated NPN transistors within a single SOT-363 package. The device features a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. Key electrical parameters include a collector-emitter voltage (VCEO) of 12 V, a maximum collector current (IC) of 65 mA, and a total power dissipation (Ptot) of 450 mW at a case temperature of 40 °C. The component operates within an ambient temperature range of -65 °C to +150 °C.

Feature Summary

• Integrates two galvanically isolated transistors in one compact package
• Optimized for low noise and high-gain broadband amplifier applications
• Features a transition frequency of 8 GHz and a minimum noise figure of 0.9 dB at 900 MHz

Applications

• Low noise broadband amplifiers
• High-gain RF signal processing circuits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details such as reel orientation or tape specifications. Confirm RoHS compliance status and check for any active lifecycle notifications regarding production discontinuation before finalizing procurement plans.

Selection Notes

Select this component for designs requiring dual isolated RF stages with minimal footprint. Ensure biasing conditions align with the specified DC current gain and breakdown voltage limits. Verify thermal management capabilities against the junction-to-solder point thermal resistance data provided in the datasheet.

Part Context

This part belongs to the BFS483 series of low noise silicon bipolar RF transistors. It is designed specifically for RF applications where space constraints necessitate multiple components in a single surface-mount package while maintaining strict noise performance standards.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided source material.