BFS17,235

Overview

The BFS17,235 is a silicon NPN wideband transistor manufactured by NXP Semiconductors. It is housed in the TO-236AB (SOT-23) plastic surface-mount package with three terminals. The device is designed for broadband operation across frequencies from 700 MHz to 2700 MHz. Key electrical characteristics include a maximum collector current of 30 mA and a collector-emitter voltage rating of 20 V. The component meets RoHS compliance standards and features integrated ESD protection.

Feature Summary

• High power gain suitable for RF applications
• Excellent thermal stability for reliable operation
• Integrated electrostatic discharge protection
• Designed for broadband signal processing

Applications

• CDMA base station circuits
• W-CDMA communication systems
• GSM EDGE infrastructure
• LTE network equipment
• WiMAX transceivers

Procurement Notes

Verify the complete part number including the suffix to ensure correct packaging orientation. Confirm RoHS compliance status matches project requirements. Check datasheet revisions for any updates to absolute maximum ratings or thermal characteristics before finalizing procurement specifications.

Selection Notes

Select this component for high-frequency amplification tasks requiring small-signal handling. Ensure the operating frequency range aligns with the 700 MHz to 2700 MHz specification. Consider the SOT-23 package constraints for PCB layout and thermal management during the design phase.

Part Context

This part belongs to NXP's portfolio of RF manual transistors intended for cellular base station applications. It serves as a small-signal stage within larger power amplifier chains. The device complements higher-power LDMOS transistors by providing initial signal conditioning and gain at lower power levels.

Replacement Considerations

Cross-reference with other NXP NPN wideband transistors in the SOT-23 package. Verify pinout compatibility and electrical parameters against alternative suppliers' equivalents before substitution.