BFS17HTC

Overview

The BFS17HTC is an NPN RF transistor manufactured by Diodes Incorporated, designed for high-frequency applications. It utilizes silicon technology and is housed in a surface-mount SOT-23-3 package. The device features a collector-emitter breakdown voltage of 11 V and a maximum DC collector current of 50 mA. It operates within a temperature range from -55°C to +150°C and holds AEC-Q101 qualification for automotive reliability.

Feature Summary

• High-frequency performance with a gain-bandwidth product of 3.2 GHz
• Automotive-grade reliability through AEC-Q101 qualification
• Compact surface-mount design suitable for space-constrained PCB layouts

Applications

• RF signal amplification in communication modules
• Low-noise amplifier stages in wireless devices
• Oscillator circuits requiring stable high-frequency operation

Procurement Notes

Verify the specific suffix against official Diodes Incorporated documentation to confirm exact binning or tape-and-reel specifications. Ensure component authenticity through authorized distribution channels to maintain AEC-Q101 compliance and avoid counterfeit risks in automotive supply chains.

Selection Notes

Select this component when designing circuits requiring an NPN transistor with a 11 V collector-emitter voltage rating and a 50 mA continuous current capacity. The SOT-23-3 package is appropriate for low-power RF designs where minimal footprint and thermal performance are balanced constraints.

Part Context

This part belongs to the BFS17 series of RF transistors produced by Diodes Incorporated. The series is engineered for general-purpose radio frequency applications, offering consistent gain and noise characteristics across the silicon manufacturing process variations typical of this product line.

Replacement Considerations

Consult official cross-reference lists for verified equivalents. Substitutes must match the SOT-23-3 package, NPN polarity, 11 V Vceo, and 3.2 GHz fT specifications to ensure circuit compatibility without redesign.