BFS17PE6327HTSA1

Overview

The Infineon BFS17PE6327HTSA1 is an NPN silicon RF transistor housed in a surface-mount SOT-23 package. It operates with a maximum collector-emitter voltage of 15 V and a continuous collector current of 25 mA, dissipating up to 280 mW of power. The device features a transition frequency (fT) of 1.4 GHz at 2 mA bias and 2.5 GHz at 25 mA bias. Key RF performance metrics include a minimum noise figure of 3.5 dB, a third-order output intercept point (OIP3) of 21.5 dBm, and a 1 dB output compression point (P-1dB) of 10 dBm.

Feature Summary

• Designed for broadband amplification applications operating up to 1 GHz
• Optimized for low-noise performance in sub-GHz mixer and oscillator circuits
• Capable of high linearity indicated by a 21.5 dBm third-order output intercept point

Applications

• Broadband amplifiers operating at collector currents between 1 mA and 20 mA
• Mixers and oscillators in sub-GHz frequency applications
• Low-noise amplifier stages requiring minimal signal degradation

Procurement Notes

Verify the specific ordering code BFS17PE6327HTSA1 against official Infineon documentation to confirm availability status and lead times. Ensure that handling precautions for ESD-sensitive devices are strictly followed during storage and assembly processes to prevent component damage.

Selection Notes

Select this component when designing circuits requiring an NPN silicon RF transistor with a 15 V breakdown voltage and a 280 mW power dissipation limit. Consider the 3.5 dB noise figure and 1.4 GHz transition frequency for sub-GHz signal processing tasks where low noise and moderate gain are required.

Part Context

This part belongs to the BFS17P series of NPN silicon RF transistors manufactured by Infineon Technologies. It utilizes a standard SOT-23 surface-mount package and is compliant with RoHS standards. The device is specifically engineered for radio frequency applications within the sub-GHz spectrum.

Replacement Considerations

Consult official Infineon cross-reference lists or datasheets for verified substitute components. Do not assume functional equivalence based solely on package type or general electrical ratings without verifying pinout compatibility and RF performance specifications.

FAQ

What is the maximum collector-base voltage rating?

The maximum collector-base voltage (VCBO) rating is 25 V.

At what bias conditions is the minimum noise figure specified?

The minimum noise figure of 3.5 dB is specified at a collector current of 2 mA, a collector-emitter voltage of 5 V, and a frequency of 800 MHz.

What is the typical DC current gain at low bias?

The typical DC current gain (hFE) is 70 when measured at a collector current of 25 mA and a collector-emitter voltage of 1 V using pulse measurement.