BFS17PE6752HTSA1

Overview

The BFS17PE6752HTSA1 is a silicon NPN RF bipolar junction transistor manufactured by Infineon Technologies. It belongs to the BFS17 series and is designed for high-frequency applications in the radio frequency spectrum. The component utilizes a surface-mount SOT-323 (SC-70) package, providing a compact form factor suitable for space-constrained circuit designs. It operates with a maximum collector-emitter voltage of 12 V and supports a continuous collector current of 80 mA. Key electrical parameters include a transition frequency of 9 GHz and a noise figure of 1.4 dB at 2 GHz, indicating suitability for low-noise amplification tasks.

Feature Summary

• Optimized for low-noise performance in RF signal chains
• High transition frequency supporting microwave band operations
• Compact surface-mount packaging for automated assembly

Applications

• Low-noise amplifier stages in mobile communication devices
• RF signal processing in wireless transceivers
• Frequency conversion circuits in consumer electronics

Procurement Notes

Verify the specific ordering suffix against the official Infineon datasheet to confirm pinout configuration and tape-and-reel specifications. Ensure that the procurement channel provides valid traceability documentation. Confirm RoHS compliance status through the manufacturer's material declaration before integration into regulated assemblies.

Selection Notes

Select this component when designing circuits requiring high gain and minimal noise addition in the UHF and microwave ranges. Compare the transition frequency and noise figure against alternative NPN BJTs to ensure compatibility with the target operating bandwidth. Verify that the SOT-323 thermal characteristics meet the power dissipation requirements of the specific application environment.

Part Context

This part is a member of the BFS17 family of RF transistors, which are engineered for general-purpose radio frequency amplification. The BFS17 series is widely utilized in telecommunications infrastructure and portable electronic devices where small footprint and high linearity are critical design constraints.

Replacement Considerations

Consult the official Infineon cross-reference guide for verified substitute part numbers. Do not assume functional equivalence with generic NPN transistors without verifying pinout compatibility and RF parameter alignment.