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The BFS17SE6327HTSA1 is an NPN silicon RF transistor manufactured by Infineon Technologies, housed in a surface-mount PG-SOT363-PO package. It features a maximum collector-emitter voltage of 15V and a continuous collector current of 25mA. The device has a maximum power dissipation of 280mW and operates with a transition frequency range of 1.3GHz to 2.5GHz. It is designed for high-frequency applications requiring reliable performance in compact form factors.
Verify the specific suffix E6327HTSA1 against official Infineon documentation to confirm packaging and tape-and-reel specifications. Ensure compatibility with SOT-363 footprint requirements during procurement planning. Cross-reference RoHS compliance status directly from the manufacturer's certificate of conformity prior to ordering to meet regulatory standards.
Select this component when a dual NPN RF transistor is required in a minimal surface-mount footprint. Consider the 15V breakdown voltage and 25mA current limits for circuit design constraints. Evaluate the 1.3–2.5 GHz transition frequency against the target application bandwidth to ensure adequate gain and noise performance at operating frequencies.
This part belongs to Infineon’s BFS series of bipolar junction transistors, specifically engineered for radio frequency applications. The SOT-363 package provides a small outline solution suitable for dense PCB layouts. It serves as a discrete alternative to integrated RF modules where customizable biasing and gain are necessary.
Direct substitutes include other dual NPN RF transistors in SOT-363 packages with comparable Vceo and fT ratings. Verify pinout compatibility and thermal characteristics before substitution. Consult Infineon’s replacement guide for validated cross-references.