BFS17TA

Overview

The BFS17TA is a single NPN bipolar junction transistor manufactured by Diodes Incorporated, designed for high-frequency radio frequency applications. It utilizes silicon technology and is housed in an SOT-23-3 surface-mount package. The device features a maximum collector-emitter voltage of 11 V and a collector-base voltage of 20 V, with an emitter-base voltage rating of 3 V. It supports a maximum DC collector current of 50 mA and dissipates up to 350 mW of power. Key electrical characteristics include a gain bandwidth product (fT) of 3.2 GHz, a saturation voltage of 500 mV, and a minimum DC current gain of 56. It operates within a temperature range of -55°C to +150°C.

Feature Summary

• Optimized for high-frequency RF signal processing with a 3.2 GHz gain bandwidth product
• Low saturation voltage design for efficient switching performance
• Robust thermal stability supporting operation up to 150°C

Applications

• RF amplifier stages in communication equipment
• High-frequency oscillator circuits
• Signal processing modules requiring low noise and fast response

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging configuration. Confirm RoHS compliance status through the supplier's documentation before procurement. Cross-reference the part number with the latest product change notifications to verify manufacturing origin and material consistency. Ensure the component meets the required AEC-Q101 qualification if automotive standards apply.

Selection Notes

Select this component when a small-form-factor NPN transistor with high-speed RF capabilities is required. The SOT-23-3 package suits space-constrained PCB layouts. Evaluate the 50 mA current limit and 350 mW power dissipation against circuit load requirements. Consider the 3.2 GHz transition frequency for suitability in UHF and microwave frequency bands compared to standard general-purpose transistors.

Part Context

The BFS17TA belongs to the BFS17 series of RF transistors from Diodes Incorporated. This series focuses on providing reliable NPN performance in compact packages for wireless and broadcast applications. It shares the same core die specifications as variants like the BFS17NQTA, differing primarily in tape-and-reel packaging configurations rather than electrical function.

Replacement Considerations

Direct substitutes include the BFS17NQTA from Diodes Incorporated, which shares identical electrical specifications. Verify pinout compatibility and thermal resistance values when considering alternative manufacturers' RF transistors with similar fT ratings.