BFS17WE6327HTSA1

Overview

The BFS17WE6327HTSA1 is an NPN silicon RF bipolar power transistor manufactured by Infineon Technologies. It operates at a maximum frequency of 1 GHz with a collector-emitter voltage (VCEO) of 15 V and an emitter-base voltage (VEBO) of 2.5 V. The device supports a continuous collector current of 25 mA and dissipates up to 280 mW of power. It functions within a temperature range of -65 °C to +150 °C and features a minimum DC current gain (hFE) of 20. Packaged in SOT-323 for surface mount applications, it holds AEC-Q100 automotive qualification.

Feature Summary

• Automotive-grade reliability certified under the AEC-Q100 standard for robust performance in demanding environments.
• Optimized for radio frequency amplification tasks operating up to 1 GHz with high thermal stability.
• Compact SMD design utilizing the SOT-323 package to facilitate efficient space-saving circuit layouts.

Applications

• RF signal amplification in automotive communication systems
• High-frequency oscillator circuits requiring stable NPN characteristics
• General-purpose RF stages in industrial equipment

Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm that the specific suffix matches the required automotive grade specifications. Ensure storage conditions comply with moisture sensitivity levels prior to soldering. Cross-reference datasheet revisions to guarantee compatibility with existing design parameters.

Selection Notes

Select this component when designing circuits requiring an NPN RF transistor with 15 V breakdown and 25 mA current handling. Consider the SOT-323 footprint for size constraints. Verify that the 280 mW power dissipation meets thermal requirements. Ensure the 1 GHz frequency limit aligns with operational bandwidth needs.

Part Context

This part belongs to the BFS17 series of RF bipolar transistors from Infineon Technologies. It shares family characteristics such as silicon construction and NPN polarity but differs in specific electrical ratings and packaging compared to other variants like the BFS17W H6327.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate alternative NPN RF transistors with similar VCEO, Ic, and frequency ratings if direct replacement is necessary.