BFS481H6327XTSA1

Overview

The BFS481H6327XTSA1 is a low noise silicon bipolar RF transistor featuring two galvanically isolated transistors within an SOT363 package. It is designed for broadband amplifiers operating at collector currents between 0.5 mA and 12 mA. Key electrical parameters include a transition frequency (fT) of 8 GHz, a minimum noise figure (NFmin) of 0.9 dB at 900 MHz, and a maximum collector-emitter voltage (VCEO) of 12 V. The device supports a total power dissipation of 175 mW with a junction temperature limit of 150 °C.

Feature Summary

• Dual internal isolated transistors in one package
• Low noise performance suitable for high-gain broadband amplifiers
• High transition frequency of 8 GHz

Applications

• Low noise, high-gain broadband amplifiers
• RF signal processing circuits

Procurement Notes

Verify the specific ordering suffix to confirm the reel packaging configuration. Confirm RoHS compliance status and check for any active discontinuation notices prior to finalizing procurement plans. Ensure handling precautions are followed due to electrostatic discharge sensitivity.

Selection Notes

Select this component when designing circuits requiring dual isolated RF stages within a compact footprint. Evaluate the 0.9 dB noise figure at 900 MHz against system requirements. Consider the 175 mW thermal dissipation limits and ensure adequate PCB heat sinking for sustained operation near the 150 °C junction temperature maximum.

Part Context

This part belongs to Infineon's BFS series of low noise silicon bipolar RF transistors. The H6327XTSA1 suffix indicates the specific tape and reel packaging format used for automated surface mount assembly processes.

Replacement Considerations

Consult official documentation for confirmed substitute part numbers before implementation.