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Product Detailed Parameters
- Description：RF TRANS PNP 15V 5GHZ PG SOT-23
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Transistor Type：PNP
- Voltage - Collector Emitter Breakdown (Max)：15V
- Frequency - Transition：5GHz
- Noise Figure (dB Typ @ f)：2dB ~ 3.2dB @ 900MHz ~ 1.8GHz
- Gain：8dB ~ 13.5dB
- Power - Max：200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：15 @ 15mA, 8V
- Current - Collector (Ic) (Max)：25mA
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：PG-SOT23
- Grade：-
- Qualification：-
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Overview
The BFT92E6327 is a PNP silicon RF bipolar transistor from Infineon Technologies, designed for high-frequency applications up to 5 GHz. It features a collector-emitter voltage of 15 V and a continuous collector current of 25 mA, with a power dissipation rating of 200 mW. The device is housed in a surface-mount PG-SOT23 package, suitable for compact circuit designs. Key electrical characteristics include a DC current gain of 15 at 15 mA and 8 V, ensuring stable performance in RF signal processing tasks.
Feature Summary
- Optimized for radio frequency operations up to 5 GHz
- Integrated design for surface-mount assembly
- Reliable PNP configuration for signal amplification
Applications
- RF signal amplification circuits
- High-frequency communication systems
- Wireless transmission modules
Procurement Notes
Verify component authenticity through official Infineon channels or authorized distributors. Confirm RoHS compliance status prior to integration. Check datasheet revisions for any updates to electrical parameters. Ensure storage conditions meet semiconductor handling standards to prevent degradation.
Selection Notes
Select this component for designs requiring PNP RF transistors within the 5 GHz range. Consider the 200 mW power dissipation limit for thermal management. The SOT-23 package dictates PCB layout constraints. Evaluate current gain requirements against the specified 15 hFE value for adequate signal amplification.
Part Context
This part belongs to Infineon's portfolio of RF bipolar transistors, specifically engineered for wireless and communication technologies. It complements other devices in the series by offering PNP polarity options alongside NPN variants, providing design flexibility for differential and push-pull amplifier configurations.
Replacement Considerations
Consult official substitution lists for direct equivalents. Verify pinout compatibility and electrical parameter alignment before replacing. Cross-reference package dimensions to ensure mechanical fit without redesigning the footprint.
