BFU520WF

BFU520WF

$0.26
  • Description:RF TRANS NPN 12V 10GHZ SC-70
  • Series:-

SKU:3df74577b1a2 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 12V 10GHZ SC-70
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Frequency - Transition:10GHz
  • Noise Figure (dB Typ @ f):1dB @ 1.8GHz
  • Gain:13dB
  • Power - Max:450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 8V
  • Current - Collector (Ic) (Max):30mA
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SC-70
  • Grade:-
  • Qualification:-

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BFU520WF

Overview

The BFU520W is an NPN silicon RF transistor designed for high-speed, low-noise applications in a plastic SOT323 package. It supports small signal to medium power operations up to 2 GHz with an 11 GHz fT technology. Key electrical parameters include a collector-base voltage of 24 V (open emitter) and 30 V (shorted base), a collector-emitter voltage of 12 V (open base) and 24 V (shorted base), and a maximum collector current of 30 mA. The device achieves a minimum noise figure of 0.6 dB at 900 MHz and a maximum stable gain of 18.5 dB at the same frequency.

Feature Summary

  • AEC-Q101 qualified for automotive reliability
  • Low noise performance optimized for sensitive receiver stages
  • High breakdown voltage capability for robust operation
  • Integrated into wideband silicon technology for frequencies up to 2 GHz

Applications

  • Broadband amplifiers operating up to 2 GHz
  • Low noise amplifiers for ISM band applications
  • ISM band oscillators requiring high supply voltages

Procurement Notes

Verify the component marking code 'ZA' against the datasheet to confirm origin as Malaysia or China. Ensure the package matches the SOT323 outline dimensions provided in section 11. Confirm AEC-Q101 qualification status if automotive usage is required. Check storage temperature limits between -65 °C and +150 °C during handling.

Selection Notes

Select this transistor when low noise figure is critical at 900 MHz or lower frequencies. Consider the 30 mA collector current limit for power requirements. Evaluate thermal resistance from junction to solder point (140 K/W) for heat dissipation needs. Verify compatibility with 50 Ohm source and load impedances for gain calculations.

Part Context

The BFU520W belongs to the BFU5 family of transistors, which includes variants like the BFU530W and BFU550W. These components share similar packaging and application profiles but differ in specific gain and noise characteristics. The family is designed for general-purpose RF amplification tasks within the industrial, scientific, and medical bands.

Replacement Considerations

BFU530W and BFU550W are part of the same evaluation kit and family, offering similar SOT323 packaging. Verify specific gain and noise figure differences before substitution.

BFU520WFBFU520WF
$0.26
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