BFU520XAR

Overview

The BFU520XAR is an NPN wideband silicon RF transistor from the BFU5 family, designed for small signal to medium power applications up to 2 GHz. It features a plastic surface-mounted SOT143B package with four leads and dual emitters. Key electrical parameters include a maximum collector-emitter voltage of 12 V (open base) or 24 V (shorted base), a collector current limit of 30 mA, and a total power dissipation of 450 mW at a solder point temperature of 87 °C. The device exhibits a minimum noise figure of 0.7 dB at 900 MHz and a maximum stable gain of 20 dB at the same frequency. Transition frequency reaches 10.5 GHz under standard test conditions.

Feature Summary

• Low noise, high breakdown RF transistor
• AEC-Q101 qualified

Applications

• Applications requiring high supply voltages and high breakdown voltages
• Broadband amplifiers up to 2 GHz
• Low noise amplifiers for ISM applications
• ISM band oscillators

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as tape and reel specifications. Ensure that the component matches the required automotive qualification standards if intended for AEC-Q101 compliant designs. Cross-reference the marking code on the physical device with the datasheet table to validate authenticity and manufacturing origin before integration into production circuits.

Selection Notes

Select this component for designs requiring low noise performance in the ISM bands while maintaining high breakdown voltage capabilities. The SOT143B package offers a compact footprint suitable for space-constrained PCB layouts. Consider the thermal resistance characteristics when designing heat dissipation paths, as power derating is dependent on the solder point temperature. Verify biasing requirements against the recommended operating conditions to ensure optimal linearity and gain stability.

Part Context

The BFU520XAR belongs to the BFU5 series of NPN silicon RF transistors manufactured by NXP Semiconductors. This series is engineered for broadband applications ranging from small signal to medium power levels. The device utilizes 11 GHz fT silicon technology to support high-frequency operations. It is housed in a standard SOT143B plastic surface-mount package, providing four terminals including dual emitters for improved RF performance.

Replacement Considerations

BFU520X

FAQ

What is the maximum collector-emitter voltage when the base is shorted?

When the base is shorted, the maximum collector-emitter voltage is 24 V.

What is the transition frequency of the BFU520XAR?

The transition frequency is typically 10.5 GHz at IC = 10 mA and VCE = 8 V.

Is the BFU520XAR qualified for automotive applications?

Yes, the BFU520X is AEC-Q101 qualified.