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Product Detailed Parameters
- Description：RF TRANS NPN 12V 10.5GHZ SOT143B
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：10.5GHz
- Noise Figure (dB Typ @ f)：1.1dB @ 1.8GHz
- Gain：18dB
- Power - Max：450mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 5mA, 8V
- Current - Collector (Ic) (Max)：30mA
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-253-4, TO-253AA
- Supplier Device Package：SOT-143B
- Grade：-
- Qualification：-
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Overview
The BFU520XVL is an NPN wideband silicon RF transistor from the BFU5 family, designed for high-speed, low-noise applications up to 2 GHz. It features a plastic SOT143B surface-mounted package with four leads and dual emitters. The device is AEC-Q101 qualified and utilizes 11 GHz fT silicon technology. Key electrical parameters include a collector-emitter voltage (VCEO) of 12 V, a maximum collector current of 30 mA, and a total power dissipation of 450 mW. At 900 MHz, it provides a minimum noise figure of 0.7 dB and a maximum stable gain of 20 dB.
Feature Summary
- Low noise performance with high breakdown voltage capabilities
- AEC-Q101 automotive qualification for reliability
- Dual emitter configuration in a compact SOT143B package
Applications
- Broadband amplifiers operating up to 2 GHz
- Low noise amplifiers for ISM band applications
- ISM band oscillators
Procurement Notes
Verify the specific suffix 'VL' against the official NXP ordering information table to confirm packaging details such as tape and reel specifications or manufacturing origin codes. Ensure the component status matches current production requirements, as datasheet revisions may affect availability or lead times.
Selection Notes
Select this component for designs requiring high supply voltages and breakdown ratings within small signal to medium power constraints. Verify that the required operating frequency remains below 2 GHz and that the thermal management strategy accommodates the 450 mW power dissipation limit in the SOT143B package.
Part Context
The BFU520XVL belongs to the BFU5 series of NPN wideband silicon RF transistors manufactured by NXP Semiconductors. This series is engineered for small signal to medium power applications, offering a balance of low noise and high gain suitable for RF front-end modules in communication systems.
Replacement Considerations
BFU520XRR
FAQ
What is the transition frequency (fT) of the BFU520XVL?
The BFU520XVL utilizes 11 GHz fT silicon technology.
Is the BFU520XVL suitable for automotive applications?
Yes, the device is AEC-Q101 qualified for use in automotive applications.
What is the maximum stable gain at 900 MHz?
The maximum stable gain is 20 dB at 900 MHz.
