BFU520YF

BFU520YF

$0.24
  • Description:RF TRANS 2 NPN 12V 10GHZ 6-TSSOP
  • Series:-

SKU:905e59496265 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF TRANS 2 NPN 12V 10GHZ 6-TSSOP
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Transistor Type:2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Frequency - Transition:10GHz
  • Noise Figure (dB Typ @ f):1dB @ 1.8GHz
  • Gain:14dB
  • Power - Max:450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 8V
  • Current - Collector (Ic) (Max):30mA
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:6-TSSOP
  • Grade:-
  • Qualification:-

Download product information

BFU520YF

Overview

The BFU520YF is a dual NPN wideband silicon RF transistor from the BFU5 family, designed for high-speed, low-noise applications up to 2 GHz. It features an 11 GHz fT technology and AEC-Q101 qualification. Key electrical parameters include a collector-emitter voltage (VCEO) of 12 V, continuous collector current of 30 mA, and total power dissipation of 450 mW. The device offers a minimum noise figure of 0.65 dB at 900 MHz and maximum stable gain of 19 dB at 900 MHz. It is housed in a plastic SOT363 surface-mounted package with six leads.

Feature Summary

  • Low noise, high breakdown RF transistor
  • AEC-Q101 qualified
  • Minimum noise figure (NFmin) = 0.65 dB at 900 MHz
  • Maximum stable gain 19 dB at 900 MHz
  • 11 GHz fT silicon technology

Applications

  • Applications requiring high supply voltages and high breakdown voltages
  • Broadband differential amplifiers up to 2 GHz
  • Low noise amplifiers for ISM applications
  • ISM band oscillators

Procurement Notes

Verify the specific ordering suffix 'F' against official documentation, as it may indicate tape-and-reel packaging or specific manufacturing origin. Confirm RoHS compliance status through the manufacturer's latest product data sheet. Ensure ESD handling precautions are followed during assembly, as specified in ANSI/ESD S20.20 standards. Check for any recent revision history updates that might affect pinning or thermal characteristics before final design integration.

Selection Notes

Select this component for designs requiring dual NPN configurations in compact SOT363 packages. It is suitable for small signal to medium power applications operating up to 2 GHz. Consider the 12 V VCEO rating for circuits needing higher breakdown voltages. Evaluate the 0.65 dB minimum noise figure for sensitive receiver front-ends. Ensure biasing conditions align with the recommended operating conditions for optimal gain and linearity performance.

Part Context

The BFU520YF belongs to the BFU5 series of transistors, which are optimized for broadband RF applications. This series includes variants like BFU520A and BFU520W, sharing similar core technologies but potentially differing in packaging or specific electrical tolerances. The BFU520Y variant specifically utilizes the SOT363 package, providing a compact solution for space-constrained PCB layouts while maintaining high-frequency performance characteristics.

Replacement Considerations

BFU520A

FAQ

What is the maximum stable gain of the BFU520YF at 900 MHz?

The maximum stable gain is 19 dB at 900 MHz.

Is the BFU520YF qualified for automotive applications?

Yes, the BFU520YF is AEC-Q101 qualified.

What is the minimum noise figure at 900 MHz?

The minimum noise figure is 0.65 dB at 900 MHz.

BFU520YFBFU520YF
$0.24
Buy Now