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Product Detailed Parameters
- Description：RF TRANS NPN 12V 11GHZ SOT-143B
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：11GHz
- Noise Figure (dB Typ @ f)：1.1dB @ 1.8GHz
- Gain：16.5dB
- Power - Max：450mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 10mA, 8V
- Current - Collector (Ic) (Max)：40mA
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-253-4, TO-253AA
- Supplier Device Package：SOT-143B
- Grade：-
- Qualification：-
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Overview
The BFU530XVL is an NPN silicon RF transistor from the BFU5 family, designed for high-speed, low-noise applications up to 2 GHz. It utilizes 11 GHz fT technology and is housed in a plastic SOT143B dual-emitter package. The device features AEC-Q101 qualification, making it suitable for automotive environments requiring high breakdown voltages. Key electrical parameters include a collector-base voltage of 24 V, a collector-emitter voltage of 12 V (open base), and a maximum collector current of 40 mA. At 900 MHz, it provides a minimum noise figure of 0.7 dB and a maximum stable gain of 22 dB.
Feature Summary
- AEC-Q101 qualified for automotive reliability
- Low noise figure with high breakdown voltage
- Dual-emitter SOT143B package design
Applications
- Broadband amplifiers up to 2 GHz
- Low noise amplifiers for ISM applications
- ISM band oscillators
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm manufacturing origin details. Ensure that the component matches the required automotive grade specifications by checking the relevant qualification certificates. Confirm package integrity and pin configuration prior to integration into the final assembly process.
Selection Notes
Select this component for designs requiring high breakdown voltage combined with low noise performance in the sub-2 GHz range. Consider the thermal resistance characteristics when designing heat dissipation paths. Evaluate the DC current gain requirements against the specified minimum values to ensure adequate signal amplification margins.
Part Context
The BFU530X belongs to the BFU5 series of wideband silicon RF transistors. This family includes variants such as the BFU520X and BFU550X, which share similar technological foundations but differ in specific electrical ratings. These components are engineered for small signal to medium power applications within the same frequency spectrum.
Replacement Considerations
BFU520X
FAQ
What is the transition frequency of the BFU530X?
The transition frequency is 11 GHz.
Is the BFU530X suitable for automotive applications?
Yes, the device is AEC-Q101 qualified.
What is the maximum collector current rating?
The maximum collector current is 40 mA.
