BFU550AR

Overview

The BFU550A is an NPN silicon RF transistor designed for high-speed, low-noise applications in a plastic SOT23 package. It features 11 GHz fT technology and AEC-Q101 qualification. Key electrical parameters include a collector-base voltage of 24 V (open emitter) or 30 V (absolute max), and a collector-emitter voltage of 12 V (open base) or 24 V (shorted base). The device operates with a maximum collector current of 50 mA and total power dissipation of 450 mW at Tsp ≤ 87 °C. At 900 MHz, it provides a minimum noise figure of 0.6 dB and a maximum stable gain of 18 dB.

Feature Summary

• Low noise performance suitable for sensitive signal amplification
• High breakdown voltage capability for robust operation
• Automotive Electronics Council qualification for reliability
• Wideband silicon technology supporting frequencies up to 2 GHz

Applications

• Broadband amplifiers operating up to 2 GHz
• Low noise amplifiers for ISM band applications
• ISM band oscillators requiring high supply voltages

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to confirm manufacturing origin details. Ensure that the selected component meets the required automotive qualification standards if intended for such environments. Confirm thermal management requirements align with the specified solder point temperature limits during installation.

Selection Notes

Select this component for designs requiring wideband RF amplification with minimal noise addition. Consider the SOT23 package constraints regarding thermal resistance and lead spacing. Evaluate the biasing conditions to ensure the collector current remains within the recommended operating range for optimal gain and linearity performance.

Part Context

The BFU550A belongs to the BFU5 family of transistors, which are engineered for small signal to medium power applications. This family shares similar architectural benefits but varies in specific performance metrics to suit different frequency and power requirements within the RF spectrum.

Replacement Considerations

OM7961 is a customer evaluation kit containing samples of BFU520A, BFU530A, and BFU550A. Direct pin-compatible replacements within the same series may be considered based on specific gain or noise requirements.

FAQ

What is the transition frequency of the BFU550A?

The transition frequency (fT) is 11 GHz when measured at IC = 25 mA, VCE = 8 V, and f = 900 MHz.

Is the BFU550A qualified for automotive use?

Yes, the BFU550A is AEC-Q101 qualified.

What is the maximum power dissipation rating?

The total power dissipation is 450 mW, provided the temperature at the solder point of the collector lead (Tsp) is less than or equal to 87 °C.