BFU580GX

Overview

The BFU580G is an NPN silicon microwave transistor designed for high-speed, medium-power applications up to 2 GHz. It utilizes 11 GHz fT technology and is housed in a plastic SOT223 package with four leads. The device features low noise, high linearity, and high breakdown voltage characteristics. Key electrical parameters include a collector-base voltage of 24 V (open emitter) or 30 V (shorted base), a collector-emitter voltage of 12 V (open base) or 24 V (shorted base), and a maximum collector current of 60 mA. At 900 MHz, it provides a minimum noise figure of 0.75 dB and a maximum stable gain of 15.5 dB.

Feature Summary

• AEC-Q101 qualified for automotive reliability
• Low noise and high linearity performance
• High breakdown voltage capability

Applications

• Broadband amplifiers up to 2 GHz
• Low noise, high linearity amplifiers for ISM applications
• Automotive antenna amplifiers

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package and marking specifications. Confirm that the component status aligns with current production requirements, as availability may change. Cross-reference the datasheet revision date with your design timeline to ensure all latest electrical characteristics and thermal data are incorporated into the final schematic and layout.

Selection Notes

Select this component when designing circuits requiring high supply voltages combined with low noise figures at frequencies up to 2 GHz. The SOT223 package offers improved heat dissipation compared to smaller surface-mount options, making it suitable for medium power applications. Ensure biasing conditions match the recommended operating limits to maintain optimal gain and linearity performance across the intended frequency band.

Part Context

The BFU580G belongs to the BFU5 family of wideband silicon RF transistors from NXP Semiconductors. This series is engineered for small signal to medium power applications. The BFU580G specifically targets scenarios demanding robust breakdown voltage alongside high-frequency performance, distinguishing it within the broader portfolio of discrete RF bipolar devices offered by the manufacturer.

Replacement Considerations

BFU590G