BFU580QX

$0.74

Description：RF TRANS NPN 12V 10.5GHZ SOT89-3
Series：-

SKU:92ded1c4c917 Category: Bipolar RF Transistors Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 12V 10.5GHZ SOT89-3
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：12V
Frequency - Transition：10.5GHz
Noise Figure (dB Typ @ f)：1.3dB @ 1.8GHz
Gain：8.5dB
Power - Max：1W
DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 30mA, 8V
Current - Collector (Ic) (Max)：60mA
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-243AA
Supplier Device Package：SOT-89-3
Grade：-
Qualification：-

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BFU580QX

Overview

The BFU580QX is an NPN silicon microwave transistor designed for high-speed, medium-power applications up to 2 GHz. It features a plastic SOT89 package with an exposed die pad for efficient heat transfer. Key electrical parameters include a collector-base voltage of 24 V and a collector-emitter voltage of 12 V (open base) or 24 V (shorted base). The device supports a continuous collector current of 60 mA and total power dissipation of 1000 mW at a solder point temperature of 120 °C. It exhibits a transition frequency of 10.5 GHz and a maximum stable gain of 14 dB at 900 MHz. The minimum noise figure is 0.75 dB at 900 MHz.

Feature Summary

AEC-Q101 qualified for automotive reliability
Low noise figure and high linearity performance
High breakdown voltage capabilities
11 GHz fT silicon technology

Applications

Broadband amplifiers up to 2 GHz
Low noise, high linearity amplifiers for ISM applications
Automotive antenna amplifiers
Applications requiring high supply voltages

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as tape and reel specifications. Ensure that the component meets AEC-Q101 qualification requirements if intended for automotive use. Confirm RoHS compliance status through the latest product data sheet before finalizing procurement orders.

Selection Notes

Select this component for designs requiring wideband operation up to 2 GHz with low noise characteristics. Consider the SOT89 package thermal resistance when designing PCB layouts for adequate heat dissipation. Verify biasing conditions to ensure operation within the recommended collector current and voltage limits for optimal gain and linearity performance.

Part Context

The BFU580QX belongs to the BFU5 family of transistors from NXP Semiconductors. This family is suitable for small signal to medium power applications in RF circuits. The device is specifically engineered for broadband amplifier designs where high linearity and low noise are critical requirements.