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The BFU590G is an NPN silicon microwave transistor designed for high-speed, medium-power applications up to 2 GHz. It utilizes 8.5 GHz fT silicon technology and is housed in a plastic SOT223 package with four leads. The device features high breakdown voltage capabilities, including a collector-base voltage of 24 V and a collector-emitter voltage of 12 V (open base). It supports a maximum collector current of 200 mA and total power dissipation of 2000 mW at a solder point temperature of 90 °C or less. The component is AEC-Q101 qualified for automotive use.
Verify the specific ordering suffix matches the required package variant. Confirm that the application environment remains within the specified thermal limits, particularly the solder point temperature constraint for power dissipation. Ensure ESD handling precautions are strictly followed during assembly due to the sensitivity of the silicon microwave structure.
Select this component when designing for medium power levels up to 2 GHz with requirements for high linearity and robust voltage margins. The SOT223 package provides increased heatsink capability suitable for dissipating up to 2 W. Consider the transition frequency and gain characteristics at target frequencies to ensure adequate amplification without external stabilization if necessary.
The BFU590G belongs to the BFU5 family of wideband transistors from NXP Semiconductors. This family includes variants such as the BFU580G, which share similar architectural foundations but differ in specific electrical parameters. The BFU5 series is engineered for small-signal to medium-power RF applications requiring reliable performance in both commercial and automotive environments.
BFU580G