BFU590QX

$0.86

Description：RF TRANS NPN 12V 8GHZ SOT-89 3
Series：-

SKU:e93bb217f118 Category: Bipolar RF Transistors Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 12V 8GHZ SOT-89 3
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：12V
Frequency - Transition：8GHz
Noise Figure (dB Typ @ f)：-
Gain：6.5dB
Power - Max：2W
DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 80mA, 8V
Current - Collector (Ic) (Max)：200mA
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-243AA
Supplier Device Package：SOT-89-3
Grade：-
Qualification：-

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BFU590QX

Overview

The BFU590Q is an NPN silicon microwave transistor designed for high-speed, medium-power applications up to 2 GHz. It utilizes 8 GHz fT silicon technology and is housed in a plastic SOT89 package with an exposed die pad for thermal management. The device features a maximum stable gain of 11 dB at 900 MHz and delivers 22 dBm output power at 1 dB gain compression under identical conditions. It supports a collector current of up to 200 mA and total power dissipation of 2000 mW. Qualified to AEC-Q101 standards, it offers high linearity and breakdown voltage suitable for automotive and ISM band amplifier designs.

Feature Summary

AEC-Q101 qualified for automotive reliability
High linearity and high breakdown voltage RF performance
Medium power capability with efficient heat transfer via exposed die pad

Applications

Automotive applications
Broadband amplifiers
Medium power amplifiers (500 mW at 433 MHz or 866 MHz)
Large signal amplifiers for ISM applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and reel specifications. Confirm that the component meets the required AEC-Q101 qualification status for your target application environment. Cross-reference the datasheet revision date to ensure compatibility with design models and application notes.

Selection Notes

Select this component for designs requiring medium power output and high linearity within the sub-2 GHz frequency range. Ensure the PCB layout accommodates the SOT89 package dimensions and provides adequate thermal grounding for the exposed pad. Verify biasing circuits support the recommended operating conditions, specifically the collector-emitter voltage and current limits defined in the characteristics section.

Part Context

The BFU590Q belongs to the BFU5 family of transistors from NXP Semiconductors. This series is engineered for small-signal to medium-power applications across wide bandwidths. The Q suffix typically denotes automotive-grade qualification, distinguishing it from standard commercial variants within the same electrical family.