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Product Detailed Parameters
- Description：RF TRANS NPN 5.5V 15GHZ 4-DFP
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：5.5V
- Frequency - Transition：15GHz
- Noise Figure (dB Typ @ f)：0.9dB ~ 1.7dB @ 1.5GHz ~ 5.8GHz
- Gain：13.5dB ~ 23.5dB
- Power - Max：136mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：90 @ 1mA, 2V
- Current - Collector (Ic) (Max)：10mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-343F
- Supplier Device Package：4-DFP
- Grade：-
- Qualification：-
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Overview
The BFU610F is an NPN silicon microwave transistor designed for high-speed, low-noise applications. It utilizes 40 GHz fT silicon technology and is housed in a plastic SOT343F dual-emitter package with reverse pinning. Key electrical parameters include a collector-base voltage of 16 V, collector-emitter voltage of 5.5 V, and maximum power dissipation of 136 mW at Tsp ≤ 90 °C. The device achieves a noise figure of 1.7 dB and associated gain of 13.5 dB at 5.8 GHz.
Feature Summary
- Low noise high gain microwave transistor
- 40 GHz fT silicon technology
Applications
- Low current battery equipped applications
- Low noise amplifiers for microwave communications systems
- Analog/digital cordless applications
- RKE
- AMR
- GPS
- ZigBee
- LTE, cellular, UMTS
- FM radio
- Mobile TV
- Bluetooth
Procurement Notes
Verify the specific ordering suffix to confirm the exact package variant and manufacturing origin. Ensure compliance with ESD handling standards such as ANSI/ESD S20.20 or IEC/ST 61340-5 during storage and assembly. Confirm that the application environment remains within the specified thermal resistance and junction temperature limits to prevent permanent damage.
Selection Notes
Select this component for designs requiring low noise performance at microwave frequencies up to 5.8 GHz. Consider the 136 mW power dissipation limit and the requirement for solder point temperature control (Tsp ≤ 90 °C) when designing thermal management solutions. Verify that the operating collector current aligns with the optimal noise figure and gain characteristics provided in the data sheet.
Part Context
The BFU610F belongs to NXP's portfolio of wideband silicon RF transistors. It is specifically engineered for microwave communication systems where low noise and high gain are critical. The device supports various wireless standards including LTE, Bluetooth, and GPS, making it suitable for modern mobile and IoT connectivity applications.
Replacement Considerations
Consult the official NXP RF Manual or product selection guides for verified substitute part numbers. Do not assume cross-compatibility with other NPN transistors without verifying pinout, voltage ratings, and RF performance metrics against the BFU610F specifications.
FAQ
What is the transition frequency (fT) of the BFU610F?
The transition frequency is typically 15 GHz under conditions of IC = 4 mA, VCE = 2 V, and f = 2 GHz.
How is the BFU610F packaged?
It is available in a plastic surface-mounted flat pack package (SOT343F) with reverse pinning and 4 leads.
What is the maximum collector-base voltage?
The maximum collector-base voltage (VCBO) is 16 V with the emitter open.
