ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANSISTOR NPN SOT343F
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Frequency - Transition：-
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Current - Collector (Ic) (Max)：-
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：SOT-343F
- Supplier Device Package：4-DFP
- Grade：-
- Qualification：-
Download product information
Overview
The BFU668F,115 is an NPN silicon microwave transistor manufactured by NXP Semiconductors. It utilizes a plastic SOT343F surface-mounted flat pack package with reverse pinning and four leads. The device features a transition frequency of 20 GHz and supports a maximum collector current of 40 mA. Key electrical parameters include a collector-base voltage rating of 16 V, a collector-emitter voltage rating of 5.5 V, and a total power dissipation of 200 mW at a solder point temperature of 90 °C or less. The component operates within a junction temperature range up to 150 °C.
Feature Summary
- Enables Ku-band Dielectric Resonator Oscillator (DRO) solutions with low phase noise and low current consumption.
- Provides low-noise performance and high gain suitable for cost-effective Low Noise Amplifier (LNA) designs.
- Built on 40 GHz fT silicon technology for wideband RF applications.
Applications
- Ku-band DROs in LNBs
- C-band low current LNAs
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Evaluate the BFU668F against circuit requirements for Ku-band oscillators and C-band amplifiers. Ensure bias conditions align with the specified 15 mA collector current for optimal gain and noise figure characteristics. Confirm that the SOT343F package dimensions fit the PCB layout constraints and verify thermal management capabilities for the 200 mW power dissipation limit.
Part Context
This component belongs to the BFU6xx/BFU7xx series of NPN wideband silicon RF transistors from NXP Semiconductors. These devices are designed for general RF functions utilizing QUBiC4 Si and SiGe:C technologies. The BFU668F specifically targets microwave applications requiring high transition frequencies and efficient operation in compact surface-mount packages.
Replacement Considerations
Consult official NXP documentation for direct cross-references. Verify compatibility with existing circuit topologies if substituting similar NPN RF transistors from other manufacturers. Ensure replacement parts meet the same SOT343F footprint and electrical specifications.
FAQ
What is the transition frequency of the BFU668F?
The transition frequency (fT) is 20 GHz when measured at IC = 15 mA, VCE = 3.5 V, and f = 2 GHz.
How is the BFU668F packaged?
It is housed in a plastic surface-mounted flat pack package (SOT343F) with reverse pinning and four leads.
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (VCEO) with the base open is 5.5 V.
