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Product Detailed Parameters
- Description：RF TRANS NPN 5.5V 18GHZ 4-DFP
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：5.5V
- Frequency - Transition：18GHz
- Noise Figure (dB Typ @ f)：0.6dB ~ 0.7dG @ 1.5GHz ~ 2.4GHz
- Gain：15.5dB ~ 18.5dB
- Power - Max：230mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：90 @ 20mA, 2V
- Current - Collector (Ic) (Max)：100mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-343F
- Supplier Device Package：4-DFP
- Grade：-
- Qualification：-
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Overview
The BFU690F,115 is an NPN silicon microwave transistor designed for high-speed, low-noise applications. It utilizes 40 GHz fT silicon technology and features a plastic SOT343F surface-mounted flat pack package with reverse pinning. Key electrical parameters include a collector-base voltage of 16 V, collector-emitter voltage of 5.5 V, and maximum power dissipation of 490 mW at Tsp ≤ 85 °C. The device offers a transition frequency (fT) of 18 GHz and a maximum power gain of 20.5 dB at 1.8 GHz. Noise figure performance is specified at 0.65 dB at 1.8 GHz.
Feature Summary
- Low noise high linearity microwave transistor
- High output third-order intercept point
- 40 GHz fT silicon technology
Applications
- Ka band oscillators DRO’s
- C-band high output buffer amplifier
- ZigBee
- LTE, cellular, UMTS
Procurement Notes
Verify the specific ordering suffix to confirm tape and reel packaging configuration. Confirm RoHS compliance status and SVHC declarations against the latest manufacturer documentation before finalizing procurement. Ensure ESD handling precautions are strictly followed during storage and assembly processes.
Selection Notes
Select this component for designs requiring high linearity and low noise in microwave frequencies. Evaluate thermal resistance from junction to solder point for adequate heat dissipation. Verify that operating conditions remain within absolute maximum ratings to prevent permanent damage or reliability degradation.
Part Context
This part belongs to the BFU690F series of wideband silicon RF transistors manufactured by NXP Semiconductors. The product data sheet revision history indicates updates to power dissipation and thermal characteristics. The device is categorized as a discrete NPN transistor suitable for general-purpose RF amplification tasks.
Replacement Considerations
BFU690F
FAQ
What is the transition frequency (fT) of the BFU690F?
The transition frequency is 18 GHz when measured at IC = 60 mA, VCE = 1 V, and f = 2 GHz.
What is the maximum power dissipation rating?
The total power dissipation is 490 mW provided the temperature at the solder point of the emitter lead (Tsp) is less than or equal to 85 °C.
Does the BFU690F support automotive applications?
No, unless expressly stated otherwise, this product is not automotive qualified and has not been tested according to automotive requirements.
