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Product Detailed Parameters
- Description：RF TRANS NPN 2.8V 55GHZ 4-DFP
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：2.8V
- Frequency - Transition：55GHz
- Noise Figure (dB Typ @ f)：0.8dB ~ 1.3dB @ 5.8GHz ~ 12GHz
- Gain：-
- Power - Max：197mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：205 @ 2mA, 2V
- Current - Collector (Ic) (Max)：30mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-343F
- Supplier Device Package：4-DFP
- Grade：-
- Qualification：-
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Overview
The BFU730F,115 is an NPN silicon germanium microwave transistor designed for high-speed, low-noise applications. It utilizes a plastic SOT343F package with reverse pinning and dual emitters. The device employs 110 GHz fT SiGe:C BiCMOS technology. Key electrical parameters include a collector-emitter voltage of 2.8 V, total power dissipation of 197 mW, and a maximum power gain of 18.5 dB at 5.8 GHz. The noise figure is specified as 0.8 dB at 5.8 GHz.
Feature Summary
- Low noise high gain microwave transistor
- 110 GHz fT silicon germanium technology
Applications
- 2nd LNA stage and mixer stage in DBS LNBs
- Low noise amplifiers for microwave communications systems
- Ka band oscillators DROs
- Wi-Fi / WLAN / WiMAX
- SDARS first stage LNA
Procurement Notes
Verify the component against the official NXP Semiconductors datasheet Rev. 1 dated April 29, 2011. Confirm that the physical package matches the SOT343F specification and that the marking code corresponds to the manufacturing origin details provided in the documentation. Ensure all handling procedures adhere to ESD safety standards.
Selection Notes
Select this component for designs requiring wideband RF performance with minimal signal degradation. The specific transition frequency and noise characteristics make it suitable for applications operating across various microwave frequencies. Evaluate the thermal resistance requirements to ensure the junction temperature remains within safe operational limits during continuous use.
Part Context
This discrete transistor belongs to the NXP Semiconductors BFU7x0F family of wideband silicon germanium RF transistors. These components are engineered for general-purpose RF functions where high linearity and low noise are critical. The product data sheet defines the specifications for production-grade units intended for integration into various communication hardware.
Replacement Considerations
BFU725F, BFU760F, BFU710F, BFU790F
FAQ
What is the transition frequency (fT) of the BFU730F?
The transition frequency is 55 GHz when measured at IC = 25 mA, VCE = 2 V, and f = 2 GHz.
What is the maximum power gain at 5.8 GHz?
The maximum power gain is 18.5 dB at 5.8 GHz under conditions of IC = 17 mA and VCE = 2 V.
How many leads does the SOT343F package contain?
The SOT343F package contains four leads with reverse pinning configuration.
