BFU768F,115

Overview

The BFU768F,115 is an NPN silicon germanium microwave transistor designed for high-speed, low-noise applications. It utilizes advanced 110 GHz fT SiGe:C BiCMOS technology with carbon added to the NPN base layer. The device is housed in a plastic SOT343F surface-mounted flat pack package with reverse pinning and four leads. Key electrical characteristics include a maximum collector-emitter voltage of 2.8 V and a maximum DC collector current of 70 mA. At 2.4 GHz, it provides a typical insertion power gain of 13.1 dB and a noise figure of 1.1 dB. At 5.0 GHz, the gain is 12.2 dB with a 1.1 dB noise figure. The third-order intercept point reaches 18.8 dBm at 5.0 GHz and 5.9 GHz.

Feature Summary

• Low noise figure and high linearity optimized for RF applications
• Very fast turn-on and turn-off times suitable for switching circuits
• Unconditionally stable operation across specified frequency bands

Applications

• Wi-Fi / WLAN / WiMAX systems
• ZigBee networks
• High linearity medium output power applications

Procurement Notes

Verify the specific ordering suffix matches the required tape and reel configuration. Confirm that the component status remains active on the manufacturer's official website before finalizing design-in decisions. Ensure compliance with RoHS directives and check for SVHC presence as indicated in the product documentation. Validate that the SOT343F package dimensions align with the target PCB footprint requirements.

Selection Notes

Select this transistor for designs requiring low noise figures below 1.2 dB in Wi-Fi LNA circuits. Consider the 2.8 V collector-emitter voltage limit when designing biasing networks. Evaluate thermal resistance characteristics if operating near maximum power dissipation limits. Verify that the required IP3 performance meets system linearity specifications at the target operating frequency.

Part Context

This component belongs to NXP Semiconductors' portfolio of wideband silicon germanium RF transistors. It is specifically engineered for microwave applications where low noise and high speed are critical. The device leverages SiGe:C BiCMOS technology to achieve superior performance metrics compared to standard silicon alternatives in similar form factors.

Replacement Considerations

No public confirmed substitute part numbers are documented in the provided datasheet.