BFU790F,115

$1.24

Description：RF TRANS NPN 2.8V 25GHZ 4-DFP
Series：-

SKU:0ba38a20461b Category: Bipolar RF Transistors Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 2.8V 25GHZ 4-DFP
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：2.8V
Frequency - Transition：25GHz
Noise Figure (dB Typ @ f)：0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz
Gain：-
Power - Max：234mW
DC Current Gain (hFE) (Min) @ Ic, Vce：235 @ 10mA, 2V
Current - Collector (Ic) (Max)：100mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-343F
Supplier Device Package：4-DFP
Grade：-
Qualification：-

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BFU790F,115

Overview

The BFU790F,115 is an NPN silicon germanium microwave transistor designed for high-speed, low-noise applications. It utilizes 110 GHz fT technology and features a plastic SOT343F package with reverse pinning. Key electrical parameters include a maximum collector-base voltage of 10 V, a maximum collector-emitter voltage of 2.8 V, and a total power dissipation of 234 mW at a solder point temperature of 90 °C or less. The device offers a typical transition frequency of 25 GHz, a maximum output power at 1 dB compression of 20 dBm at 1.8 GHz, and a minimum noise figure of 0.40 dB at 1.8 GHz.

Feature Summary

Low noise high linearity microwave transistor
110 GHz fT silicon germanium technology
High maximum output power at 1 dB compression

Applications

High linearity applications
Medium output power applications
Wi-Fi / WLAN / WiMAX
ZigBee
LTE, cellular, UMTS

Procurement Notes

Verify the specific ordering suffix to confirm tape and reel packaging configuration. Confirm RoHS compliance status and SVHC declarations against the latest manufacturer documentation before integration. Ensure ESD handling precautions are strictly followed during assembly due to device sensitivity.

Selection Notes

Select this component for designs requiring low noise figures and high linearity in RF front-ends. Verify that the 2.8 V collector-emitter voltage rating aligns with the system supply rails. Check thermal resistance requirements against the 234 mW power dissipation limit under expected operating temperatures.

Part Context

This part belongs to the BFU790F series of wideband silicon germanium RF transistors manufactured by NXP Semiconductors. It is specifically engineered for microwave applications where signal integrity and gain are critical. The product data sheet defines its absolute maximum ratings and characteristic performance metrics for design reference.