BFU910FX

Overview

The BFU910FX is an NPN silicon germanium RF transistor designed for high-speed, low-noise applications up to 20 GHz. It utilizes 90 GHz fT SiGe technology and features a plastic SOT343F package with reverse pinning. Key electrical parameters include a maximum stable gain of 14.2 dB at 12 GHz (IC=6mA) and a minimum noise figure of 0.65 dB at the same frequency. The device supports a collector current of up to 15 mA and total power dissipation of 300 mW at Tsp ≤ 90°C. Transition frequency reaches 90 GHz, while DC current gain typically measures 1900 at IC=6mA.

Feature Summary

• Low noise high gain microwave transistor
• Suitable for small signal applications up to 20 GHz

Applications

• Ku band DBS Low-Noise blocks

Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm the specific ordering suffix matches the required manufacturing origin, as markings indicate production in Malaysia or China. Ensure the product status aligns with current availability, as supply conditions may change over time. Request updated datasheets to confirm any revisions to specifications or legal disclaimers before finalizing procurement decisions.

Selection Notes

Select this component for Ku-band satellite receiver front ends requiring minimal signal degradation. Verify that the operating environment maintains the solder point temperature within the specified thermal limits to ensure reliable power dissipation. Ensure biasing circuits provide the recommended collector current and voltage levels to achieve optimal noise figure and gain performance without exceeding absolute maximum ratings.

Part Context

This part belongs to the BFU910 series of wideband silicon germanium RF transistors manufactured by NXP Semiconductors. The 'FX' suffix denotes a specific packaging variant, typically tape and reel, whereas the base model 'BFU910F' refers to the standard SOT343F flat pack package. Both variants share identical electrical characteristics and functional capabilities defined in the product data sheet.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

FAQ

What is the transition frequency (fT) of the BFU910FX?

The transition frequency is 90 GHz when measured at a collector current of 5 mA and a collector-emitter voltage of 2 V.

How does the collector-emitter breakdown voltage vary with base configuration?

With the base open, the collector-emitter breakdown voltage is 2.0 V. When the base is shorted to the emitter, the breakdown voltage increases to 9.5 V.

What is the typical DC current gain (hFE) at standard operating conditions?

The typical DC current gain is 1900 when the collector current is 6 mA and the collector-emitter voltage is 2 V.