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Product Detailed Parameters
- Description：15V 25MA 200MW TH TRANSISTOR-SMA
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Box
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：15V
- Frequency - Transition：1.4GHz
- Noise Figure (dB Typ @ f)：5.5dB @ 800MHz
- Gain：23dB
- Power - Max：200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 25mA, 1V
- Current - Collector (Ic) (Max)：25mA
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-206AF, TO-72-4 Metal Can
- Supplier Device Package：TO-72
- Grade：-
- Qualification：-
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Overview
The BFY90 TIN/LEAD is a silicon NPN RF bipolar transistor manufactured by Central Semiconductor Corp. It features a hermetically sealed TO-72 through-hole package designed for VHF and UHF applications. Key electrical specifications include a maximum DC collector current of 50 mA, power dissipation of 200 mW, and a transition frequency of 1.4 GHz. The device offers a typical gain of 23 dB and operates with a collector-base voltage of 30 V.
Feature Summary
- Hermetically sealed construction for reliable performance in demanding environments
- Optimized for high-frequency amplification and oscillation circuits
- Epitaxial planar technology ensures stable NPN operation
Applications
- VHF/UHF amplifier stages
- RF oscillator circuits
- Signal converter modules
Procurement Notes
Verify the specific plating suffix required for your assembly process. Select 'TIN/LEAD' for traditional leaded components or 'PBFREE' if lead-free compliance is mandatory. Confirm that the TO-72 package dimensions match your PCB footprint before finalizing orders. Ensure the selected variant aligns with your thermal management requirements given the 200 mW dissipation limit.
Selection Notes
Choose this component when designing circuits requiring robust RF performance at VHF and UHF frequencies. The hermetic seal provides superior environmental protection compared to standard plastic packages. Consider the 1.4 GHz transition frequency when evaluating bandwidth needs. Ensure the 50 mA current rating suffices for your load requirements without exceeding thermal limits.
Part Context
This part belongs to the Central Semiconductor BFX89/BFY90 family of silicon NPN RF transistors. These devices are engineered specifically for niche discrete semiconductor applications where reliability and high-frequency stability are critical. They serve as specialized alternatives to general-purpose transistors in radio frequency design.
Replacement Considerations
No public confirmed substitute part numbers are documented for this specific component.
FAQ
What is the maximum DC collector current for the BFY90?
The maximum DC collector current is 50 mA.
Is the BFY90 available in a surface mount package?
No, the BFY90 is mounted in a through-hole TO-72 package.
