BG5120KE6327HTSA1

BG5120KE6327HTSA1

  • Description:RF MOSFET 5V SOT363
  • Series:-

SKU:8b8f176145db Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET 5V SOT363
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Frequency:800MHz
  • Gain:23dB
  • Voltage - Test:5 V
  • Current Rating (Amps):20mA
  • Noise Figure:1.1dB
  • Current - Test:10 mA
  • Power - Output:-
  • Voltage - Rated:8 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-VSSOP, SC-88, SOT-363
  • Supplier Device Package:PG-SOT363-PO
  • Configuration:2 N-Channel (Dual)

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BG5120KE6327HTSA1

Overview

The BG5120KE6327HTSA1 is a dual N-channel MOSFET tetrode in an SOT-363 package. It integrates two AGC amplifiers with low noise figure and high gain control range. Key electrical parameters include a drain-source voltage of 8 V, continuous drain current of 20 mA, and total power dissipation of 200 mW. The device features integrated gate protection diodes and meets AEC-Q101 qualification standards.

Feature Summary

  • Dual amplifier configuration within a single compact package
  • Low noise figure suitable for sensitive RF front-end applications
  • Integrated gate protection diodes for enhanced reliability

Applications

  • Low noise gain controlled input stages for UHF tuners
  • Low noise gain controlled input stages for VHF tuners
  • NTSC tuner circuits
  • PAL tuner circuits

Procurement Notes

Verify the component against official Infineon documentation to confirm pinout alignment and electrical specifications. Ensure that the SOT-363 footprint matches the target PCB design. Confirm compliance with RoHS requirements and AEC-Q101 automotive qualification standards before finalizing procurement decisions.

Selection Notes

Select this component when designing dual-channel low-noise amplifier stages requiring integrated automatic gain control. The dual N-channel MOSFET structure allows for efficient space utilization in tuner applications. Evaluate thermal resistance characteristics to ensure adequate heat dissipation within the specified operating temperature range.

Part Context

This part belongs to the BG5120K series of dual N-channel MOSFET tetrodes manufactured by Infineon Technologies. The 'E' suffix indicates specific tape and reel packaging configurations, while '6327' denotes the standard ordering code. The 'HTSA1' suffix typically represents lead-free (Pb-free) and RoHS compliant packaging variants.

Replacement Considerations

Direct replacements must match the dual N-channel MOSFET tetrode architecture and SOT-363 package dimensions. Verify that substitute components meet the 8 V drain-source voltage rating and 20 mA continuous drain current limits. Cross-reference noise figure and gain control range specifications to ensure compatibility with existing tuner circuit designs.

BG5120KE6327HTSA1BG5120KE6327HTSA1

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