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Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 40A TO-247
- Series：-
- Mfr：Bourns Inc.
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 20A
- Power - Max：192 W
- Switching Energy：1mJ (on), 300µJ (off)
- Input Type：Standard
- Gate Charge：52 nC
- Td (on/off) @ 25°C：19ns/48ns
- Test Condition：400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：33.7 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
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Overview
The Bourns BIDW20N60T is a discrete Insulated Gate Bipolar Transistor (IGBT) housed in a TO-247 package. It features a 600 V collector-emitter voltage rating and a continuous collector current of 20 A at a case temperature of 100 °C, with a maximum pulsed current of 60 A. The device utilizes Trench-Gate Field-Stop technology to achieve low saturation voltage and reduced switching losses. Key electrical parameters include a typical VCE(sat) of 1.7 V at 25 °C and 20 A, a total gate charge of 52 nC, and a short-circuit withstand time of 10 µs. Thermal resistance from junction to case is 0.65 °C/W for the IGBT and 1.19 °C/W for the integrated diode.
Feature Summary
- Utilizes advanced Trench-Gate Field-Stop technology for optimized conduction and dynamic control.
- Integrates a built-in fast recovery diode (FRD) to facilitate faster turn-off times.
- Provides positive temperature coefficient characteristics for stable parallel operation.
Applications
- Switch-Mode Power Supplies (SMPS)
- Uninterruptible Power Sources (UPS)
- Power Factor Correction (PFC)
- Stepper motors
Procurement Notes
Verify the latest datasheet revision directly from the manufacturer before finalizing designs. Confirm RoHS compliance status against Directive 2015/863 requirements. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values. Validate that operating conditions remain within the absolute maximum ratings to prevent device failure.
Selection Notes
Select this component for high-voltage applications requiring efficient power conversion. The medium-speed optimization balances switching loss and conduction loss effectively. Consider the 10 µs short-circuit withstand capability when designing protection circuits. Evaluate the TO-247 package dimensions for adequate PCB space and heat sinking requirements.
Part Context
This device belongs to the Bourns BID series of discrete IGBTs. The series combines MOS gate technology with bipolar transistor structures to handle high voltage and current loads efficiently. The 'W' suffix indicates the TO-247 package style, while '20' denotes the 20 A current rating and '60' represents the 600 V breakdown voltage class.
Replacement Considerations
Consult official Bourns documentation for qualified substitute part numbers. Verify pinout compatibility and thermal performance metrics before swapping components in existing designs.
FAQ
What is the short-circuit withstand time for the BIDW20N60T?
The device can withstand a short circuit for 10 µs under conditions of VCE = 300 V and VGE = 15 V.
Does the BIDW20N60T include an integrated diode?
Yes, the device includes a built-in Fast Recovery Diode (FRD) on the back side tab connected to the collector.
What is the typical gate threshold voltage range?
The gate threshold voltage ranges from a minimum of 4.0 V to a maximum of 6.5 V, with a typical value of 5.0 V.
