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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 80A TO-247
- Series：-
- Mfr：Bourns Inc.
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：1.7V @ 15V, 40A
- Power - Max：230 W
- Switching Energy：580µJ (on), 630µJ (off)
- Input Type：Standard
- Gate Charge：107 nC
- Td (on/off) @ 25°C：28ns/150ns
- Test Condition：400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr)：106 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
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Overview
The Bourns BIDW40N65ES5 is a discrete Insulated Gate Bipolar Transistor (IGBT) with an integrated fast recovery diode, rated for 650 V collector-emitter voltage and 80 A continuous collector current at 25 °C. It utilizes Trench-Gate Field-Stop technology to achieve low saturation voltage and optimized conduction characteristics. The device operates within a junction temperature range of -40 °C to +175 °C and dissipates up to 230 W of total power. Packaged in a TO-247-3L through-hole configuration, it features a maximum operating temperature of 175 °C and complies with RoHS standards.
Feature Summary
- Trench-Gate Field-Stop technology provides enhanced dynamic control and reduced switching losses.
- Optimized for low collector-emitter saturation voltage to improve conduction efficiency.
- Integrated built-in fast recovery diode simplifies circuit design for high-voltage applications.
Applications
- Switched-Mode Power Supplies (SMPS)
- Uninterruptible Power Sources (UPS)
- Power Factor Correction (PFC)
- Inverters
- Photovoltaic systems
Procurement Notes
Verify the specific ordering suffix 'ES5' against the manufacturer's latest documentation to confirm the exact revision and packaging details. Ensure that the component meets all applicable environmental compliance requirements for your target market before finalizing procurement orders.
Selection Notes
Select this IGBT for high-voltage, high-current applications requiring medium-speed switching capabilities. Consider the thermal resistance values and safe operating area when designing heat dissipation solutions to maintain junction temperatures within the specified limits during operation.
Part Context
This component belongs to the Bourns BID series of discrete IGBTs, which combine MOS gate technology with bipolar transistor structures. The series is designed for robust performance in high-power environments, offering improved thermal management and lower on-state voltage compared to standard trench technologies.
Replacement Considerations
Consult official Bourns documentation for verified substitute part numbers. Cross-referencing requires matching electrical ratings, package dimensions, and switching characteristics to ensure compatibility without redesigning the host circuitry.
FAQ
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (VCES) is rated at 650 V.
Does the device include an integrated diode?
Yes, the internal circuit diagram indicates a built-in Fast Recovery Diode (FRD).
What is the typical collector-emitter saturation voltage?
At TC = 25 °C and IC = 40 A, the typical VCE(sat) is 1.35 V, with a maximum of 1.7 V.
