BIDW75N65ES5

Overview

The Bourns BIDW75N65ES5 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing Trench-Gate Field-Stop technology. It features a collector-emitter voltage of 650 V and a continuous collector current of 150 A at 25°C case temperature, reducing to 75 A at 100°C. The device operates with a maximum junction temperature of 175°C and total power dissipation of 394 W. Static characteristics include a typical collector-emitter saturation voltage of 1.42 V at 75 A and 25°C. Dynamic performance includes a turn-on switching energy of 1.56 mJ and turn-off switching energy of 1.07 mJ under standard test conditions.

Feature Summary

• Utilizes novel trench-gate field-stop technology for optimized conduction and reduced switching losses.
• Designed as an efficient medium-speed switching device suitable for high voltage and high current applications.
• Integrates a built-in fast recovery diode within the TO-247-3L package.

Applications

• Switch-Mode Power Supplies (SMPS)
• Uninterruptible Power Sources (UPS)
• Power Factor Correction (PFC)
• Inverters
• Photovoltaic systems

Procurement Notes

Verify component authenticity by checking the marking code against official Bourns documentation. Confirm RoHS compliance status relative to Directive 2015/863. Ensure thermal management design accounts for the specified junction-to-case thermal resistance values. Validate that operating conditions remain within the absolute maximum ratings defined in the datasheet to prevent device failure.

Selection Notes

Select this component for designs requiring a balance between low conduction loss and manageable switching speed. The 650 V rating supports standard industrial bus voltages. Consider the 150 A peak capability for inductive load handling. Evaluate gate drive requirements based on the specified gate charge parameters. Ensure the application environment allows for adequate heat sinking to maintain junction temperatures below the 175°C limit.

Part Context

This IGBT belongs to the Bourns BID discrete series, which combines MOS gate technology with bipolar transistor structures. The series targets high-efficiency power conversion applications. The specific model utilizes the TO-247-3L package, providing robust mechanical mounting and thermal performance for through-hole assembly processes in power electronics circuits.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers must verify pinout compatibility, electrical parameter margins, and thermal characteristics when considering alternative manufacturers or different series from the same vendor.