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The BLA6H0912-DTS,112 is an LDMOS power transistor manufactured by Ampleon. It is designed for pulsed applications in the 0.5 GHz to 1.4 GHz range. The device features a ceramic flange mount package with two terminals. Key electrical parameters include a minimum drain-source breakdown voltage of 100 V and a maximum drain current of 2.5 A. It operates in enhancement mode and utilizes silicon N-channel metal-oxide semiconductor technology.
Verify the specific ordering suffix against official Ampleon documentation to ensure correct package and compliance specifications. Confirm RoHS status and lead times directly with authorized distributors or the manufacturer. Ensure the component matches the required ceramic flange mount form factor for your application.
Select this component for applications requiring reliable pulsed performance in the L-band. Consider the 100 V breakdown voltage and 2.5 A current limits when designing the bias circuitry. Verify that the flange mount package aligns with your system's thermal dissipation requirements and mechanical constraints.
This part belongs to the BLA6H series of LDMOS transistors from Ampleon. These devices are typically used in defense and aerospace sectors. The DTS suffix indicates a specific package variant within this family. Other variants like BLA6H0912-500 exist but may differ in power ratings or packaging.
Check for direct substitutes such as the BLL6H0514-25,112 if lower power is acceptable. Verify pinout compatibility and thermal characteristics before replacing. Consult Ampleon's cross-reference guides for approved alternatives.