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The BLA9G1011LS-300GU is a 300 W LDMOS power transistor designed for avionics applications operating between 1030 MHz and 1090 MHz. It utilizes an earless flanged ceramic package (SOT502E) with two leads. The device features a drain-source voltage rating of 65 V, a gate-source threshold voltage of 2.0 V typical, and a drain-source on-state resistance of 0.043 Ω. At 1060 MHz with a 32 V supply, it delivers 300 W output power with a gain of 19.5 dB and a drain efficiency of 60.5%. The junction temperature limit is 225 °C.
Verify the specific suffix 'U' against official Ampleon documentation to confirm packaging details, as datasheets list 'BLA9G1011LS-300G' without this suffix. Ensure compliance with RoHS Directive 2002/95/EC requirements during procurement. Confirm availability through authorized distributors or direct manufacturer channels.
Select this component for avionics systems requiring high power output within the 1030 MHz to 1090 MHz band. The SOT502E package requires appropriate mounting hardware for the flange. Designers must account for the 225 °C maximum junction temperature and ensure adequate thermal management to maintain reliability under pulsed RF conditions.
This part belongs to the BLA9G1011L(S)-300(G) family from Ampleon. Variants include SOT502A, SOT502B, SOT502F, and SOT502E packages. The LS-300G designation corresponds to the earless flanged ceramic package (SOT502E). All variants share identical electrical characteristics but differ in mechanical mounting configurations.
Direct replacements within the same family include BLA9G1011L-300G (SOT502F) and BLA9G1011LS-300G (SOT502E). Verify mechanical fit due to differing package outlines. Electrical performance remains consistent across these variants.