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The BLA9H0912LS-700GU is a 700 W LDMOS power transistor designed for avionics applications in the 960 MHz to 1215 MHz frequency range. It utilizes an earless flanged ceramic package (SOT502E) with two leads. The device operates at a drain-source voltage of 50 V, delivering 700 W output power with a typical power gain of 20 dB and drain efficiency of 62%. Key electrical characteristics include a gate-source threshold voltage ranging from 1.5 V to 2.5 V, a maximum junction temperature of 225 °C, and a drain-source breakdown voltage of 106 V.
Verify the specific SOT502E earless flanged ceramic package configuration against the design requirements. Confirm RoHS compliance status via official Ampleon product details. Ensure handling procedures meet CDM Class C2A and HBM Class 2 electrostatic discharge sensitivity standards during assembly and testing.
Select this component for avionics transmitter designs requiring high ruggedness and thermal stability within the specified frequency band. Evaluate the internal matching capabilities to simplify circuit design. Consider the 225 °C maximum junction temperature rating for thermal management planning in high-power pulsed operations.
This part belongs to the BLA9H0912L(S)-700(G) family of power LDMOS transistors. The 'G' suffix indicates RoHS compliance, while 'LS' denotes the earless flanged ceramic package variant (SOT502E). Other family members include flanged packages with ears or mounting holes, sharing similar electrical performance profiles.
Direct replacements within the same family include BLA9H0912L-700G (SOT502F) and BLA9H0912LS-700 (SOT502B). Verify mechanical footprint compatibility due to differences in mounting hole configurations and lead arrangements between package variants.