BLC10G18XS-600AVTZ

Overview

The BLC10G18XS-600AVTZ is a dual N-channel LDMOS RF MOSFET transistor manufactured by Ampleon. Designed for surface mount applications, it operates within the frequency range of 1.805 GHz to 1.88 GHz. The device features a drain-source breakdown voltage (Vds) of 65 V and provides an output power of 550 W with a gain of 16.1 dB. It utilizes the SOT1258-4-7 package and supports a gate-source voltage range of -6 V to +9 V. The component functions reliably across a temperature range from -40°C to +125°C.

Feature Summary

• Dual N-channel LDMOS architecture for high-power RF amplification
• Optimized performance in the 1.805 GHz to 1.88 GHz frequency band
• Surface-mount compatible SOT1258-4-7 package design

Applications

• Base station power amplification
• Broadband RF signal processing
• Wireless communication infrastructure

Procurement Notes

Verify the specific suffix 'TZ' against official Ampleon documentation to confirm tray packaging requirements. Ensure compatibility with SOT1258-4-7 footprints during procurement planning. Confirm moisture sensitivity handling procedures are available prior to acquisition.

Selection Notes

Select this component when 550 W output power at 1.805–1.88 GHz is required. Compare Rds(on) values of 62 mOhms and 108 mOhms against circuit thermal constraints. Verify that the 65 V Vds rating aligns with the system supply voltage specifications.

Part Context

This part belongs to the BLC10G series of LDMOS transistors. It shares the SOT1258-4-7 package with variants like BLC10G18XS-552AVTY but differs in output power ratings and specific frequency optimization parameters defined by the manufacturer.

Replacement Considerations

BLC10G18XS-552AVTY offers similar electrical characteristics but specifies 550 W output power.