BLC10G19LS-250WTZ

Overview

The BLC10G19LS-250WT is a 250 W LDMOS power transistor designed for base station applications in the 1930 MHz to 1990 MHz frequency range. It features a drain-source voltage of 65 V and operates with a quiescent current of 1400 mA at 28 V. In typical class-AB operation, it delivers an average output power of 60 W with a gain of 19.3 dB and drain efficiency of 31%. The device utilizes an SOT1271-2 air cavity plastic earless flanged package with six leads.

Feature Summary

• Excellent ruggedness capable of withstanding high load mismatch conditions
• High efficiency combined with low thermal resistance for stability
• Low memory effects enabling excellent pre-distortability
• Internally matched design for ease of integration

Applications

• RF power amplifier for W-CDMA base stations
• Multi-carrier applications in the 1930 MHz to 1990 MHz range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package version and compliance status. Confirm that the component meets all relevant environmental directives before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring high linearity and power density in the PCS band. Ensure the thermal management system can handle the junction-to-case thermal resistance of 0.28 K/W to maintain reliability under continuous operation.

Part Context

This part belongs to Ampleon's portfolio of LDMOS power transistors specifically engineered for wireless infrastructure. It represents a solution for modern cellular base stations requiring robust performance in multi-carrier environments.

Replacement Considerations

Consult official substitution guides for compatible devices within the same product family or technology node. Verify pinout compatibility and electrical parameter alignment before considering alternative part numbers.