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The BLC10G19XS-600AVTY is a dual N-channel LDMOS RF power transistor manufactured by Ampleon. It operates within the frequency range of 1.93 GHz to 1.995 GHz, delivering an output power of 600 W with a gain of 15 dB. The device features a drain-source breakdown voltage (Vds) of 65 V and on-resistances of 58.4 mΩ and 111 mΩ. Packaged in SOT1258-4-7, it supports surface mount installation and functions between -40°C and +125°C.
Verify the specific suffix AVTY indicates tape and reel packaging versus other variants like AVTZ which may use tray packaging. Confirm the exact part number matches the required frequency band and power specifications for your design. Ensure compatibility with the SOT1258-4-7 footprint and thermal management requirements specified in the official datasheet before finalizing procurement orders.
Select this component when designing for the 1.93–1.995 GHz band requiring 600 W output power. The dual N-channel configuration suits balanced or push-pull topologies. Consider the 15 dB gain and 65 V breakdown voltage for biasing calculations. Ensure the system can handle the thermal load associated with the SOT1258-4-7 package in high-efficiency Doherty configurations.
This part belongs to Ampleon's BLC series of LDMOS transistors optimized for cellular base stations. It complements similar models like the BLC10G19XS-600AVTZ and BLC10G22XS-600AVTY, differing primarily in packaging format and slight frequency variations. The series focuses on high-power density and reliability for modern wireless infrastructure.
The BLC10G19XS-600AVTZ serves as a direct alternative with identical electrical characteristics but utilizes tray packaging instead of tape and reel. Verify that the manufacturing lot and suffix match the required handling and assembly process for your production line.