BLC10G19XS-600AVTZ

Overview

The BLC10G19XS-600AVTZ is a 600 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 1930 MHz to 1995 MHz frequency range. It features a drain-source breakdown voltage of 65 V and operates with a case temperature range from -40 °C to +125 °C. The device utilizes an SOT1258-4 air cavity plastic earless flanged package with six leads. Typical performance at Tcase = 25 °C includes a power gain of 15.5 dB, drain efficiency of 48.5%, and ACPR of -34 dBc under 1-carrier W-CDMA test conditions.

Feature Summary

• Designed for low memory effects to provide excellent digital pre-distortion capability
• Internally matched structure for ease of integration into amplifier circuits
• Lower output capacitance optimized for improved performance in Doherty configurations
• Integrated ESD protection compliant with CDM Class 3 and HBM Class 2 standards

Applications

• RF power amplifiers for base stations operating in the 1930 MHz to 1995 MHz range
• Multi-carrier applications utilizing asymmetrical Doherty architectures
• W-CDMA and LTE signal amplification requiring high linearity and efficiency

Procurement Notes

Verify component authenticity through authorized Ampleon distribution channels. Confirm RoHS compliance status via official product details. Ensure handling procedures adhere to ESD sensitivity classifications (CDM Class 3, HBM Class 2) to prevent damage during storage and assembly.

Selection Notes

Select this component for designs requiring high ruggedness against load mismatches up to 10:1 VSWR. Evaluate thermal resistance characteristics relative to the specific heat sink design. Consider the internal matching network when designing input and output impedance circuits for optimal power transfer.

Part Context

This device belongs to the BLC10G series of LDMOS transistors manufactured by Ampleon. It is specifically engineered for wireless infrastructure, offering a balance of high output power and efficiency. The part number suffix indicates the specific package variant and compliance attributes defined in the ordering information.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult Ampleon technical support for cross-reference recommendations or verify compatibility with existing board layouts if considering alternative devices.

FAQ

What is the maximum load mismatch the device can withstand?

The BLC10G19XS-600AVT can withstand a load mismatch corresponding to VSWR = 10:1 through all phases under specified test conditions.

What is the recommended package type for this transistor?

The device is packaged in an SOT1258-4 air cavity plastic earless flanged package with 6 leads.

How does the device handle electrostatic discharge?

It is granted CDM classification C3 (1000 V pulse) and HBM classification 2 (2000 V pulse), indicating integrated ESD protection.