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The BLC10G22XS-602AVTY is a dual N-channel LDMOS RF MOSFET transistor manufactured by Ampleon. It operates within the frequency range of 2.11 GHz to 2.17 GHz, delivering an output power of 600 W with a gain of 15.4 dB. The device features a drain-source breakdown voltage (Vds) of 65 V and on-resistances of 57.4 mOhms and 111 mOhms. Designed for surface mount installation in SOT1258-4-7 packages, it supports operating temperatures from -40°C to +125°C.
Verify component authenticity through authorized Ampleon distributors or certified suppliers. Confirm package integrity and RoHS compliance status prior to integration. Ensure storage conditions meet humidity sensitivity requirements for SMD components. Validate datasheet revisions against current manufacturing specifications to avoid obsolescence issues during production cycles.
Select this component for designs requiring 600 W output at cellular frequencies. Compare Rds(on) values against thermal management capabilities. Ensure biasing circuits support the specified Vgs thresholds. Verify PCB layout compatibility with SOT1258-4-7 footprint dimensions and thermal pad requirements for optimal heat dissipation.
This part belongs to Ampleon's BLC series of LDMOS transistors designed for wireless infrastructure. It shares the SOT1258 package family with variants like BLC10G18XS-602AVTZ but differs in frequency optimization for higher bands. The suffix AVTY indicates specific packaging and testing configurations distinct from tray versions.
BLC10G18XS-602AVTZ offers similar power ratings but targets lower frequencies (1.805–1.88 GHz). BLC10G16XS-600AVTZ provides comparable specs for 1.427–1.518 GHz applications. Direct substitution requires verifying frequency band alignment and matching network adjustments.