SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BLC8G20LS-310AV is a 310 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 1900 MHz to 2000 MHz frequency range. It operates with a drain-source voltage of 28 V and features an air cavity plastic earless flanged package (SOT1258-1). The device delivers a typical peak output power of 300 W, a power gain of 16.9 dB, and a drain efficiency of 42.5% under 1-carrier W-CDMA test conditions. It includes integrated ESD protection and is internally matched for ease of use.
Verify the component status as a product data sheet before initiating designs. Confirm the package version matches SOT1258-1. Ensure handling procedures comply with CDM Class C2A and HBM Class 2 ESD sensitivity ratings. Check for RoHS compliance regarding Directive 2002/95/EC.
Select this transistor for high-efficiency Doherty amplifier designs requiring low memory effects. Verify that the application supports the specified 28 V drain-source voltage and 65 V breakdown limits. Ensure the thermal management system can maintain the junction temperature within the 225 °C maximum limit during operation.
This part belongs to Ampleon's Power LDMOS transistor portfolio. It is specifically engineered for RF power amplification in cellular infrastructure. The device utilizes Laterally Diffused Metal-Oxide Semiconductor technology optimized for high linearity and efficiency in multi-carrier environments.
No public confirmed substitute part numbers are documented in the provided datasheet.