BLC8G20LS-310AVY

BLC8G20LS-310AVY

$65.63
  • Description:RF MOSFET LDMOS 28V DFM6
  • Series:-

SKU:802704d4c7ef Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V DFM6
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT),Bulk
  • Technology:LDMOS
  • Frequency:1.93GHz ~ 1.99GHz
  • Gain:17dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:650 mA
  • Power - Output:56W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1258-3
  • Supplier Device Package:DFM6
  • Configuration:Dual, Common Source

Download product information

BLC8G20LS-310AVY

Overview

The BLC8G20LS-310AV is a 310 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 1900 MHz to 2000 MHz frequency range. It operates with a drain-source voltage of 28 V and features an air cavity plastic earless flanged package (SOT1258-1). The device delivers a typical peak output power of 300 W, a power gain of 16.9 dB, and a drain efficiency of 42.5% under 1-carrier W-CDMA test conditions. It includes integrated ESD protection and is internally matched for ease of use.

Feature Summary

  • Designed for low memory effects providing excellent digital pre-distortion capability
  • Lower output capacitance for improved performance in Doherty applications
  • Low thermal resistance providing excellent thermal stability
  • Excellent ruggedness capable of withstanding high load mismatch

Applications

  • RF power amplifiers for base stations
  • Multi carrier applications in the 1900 MHz to 2000 MHz frequency range
  • Asymmetrical Doherty production test circuits

Procurement Notes

Verify the component status as a product data sheet before initiating designs. Confirm the package version matches SOT1258-1. Ensure handling procedures comply with CDM Class C2A and HBM Class 2 ESD sensitivity ratings. Check for RoHS compliance regarding Directive 2002/95/EC.

Selection Notes

Select this transistor for high-efficiency Doherty amplifier designs requiring low memory effects. Verify that the application supports the specified 28 V drain-source voltage and 65 V breakdown limits. Ensure the thermal management system can maintain the junction temperature within the 225 °C maximum limit during operation.

Part Context

This part belongs to Ampleon's Power LDMOS transistor portfolio. It is specifically engineered for RF power amplification in cellular infrastructure. The device utilizes Laterally Diffused Metal-Oxide Semiconductor technology optimized for high linearity and efficiency in multi-carrier environments.

Replacement Considerations

No public confirmed substitute part numbers are documented in the provided datasheet.

BLC8G20LS-310AVYBLC8G20LS-310AVY
$65.63
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