BLC8G20LS-310AVZ

BLC8G20LS-310AVZ

$65.63
  • Description:RF MOSFET LDMOS 28V DFM6
  • Series:-

SKU:9413c8483adc Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V DFM6
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Bulk,Tray
  • Technology:LDMOS
  • Frequency:1.93GHz ~ 1.99GHz
  • Gain:17dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:650 mA
  • Power - Output:56W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1258-3
  • Supplier Device Package:DFM6
  • Configuration:Dual, Common Source

Download product information

BLC8G20LS-310AVZ

Overview

The BLC8G20LS-310AV is a 310 W LDMOS packaged asymmetric Doherty power transistor designed for base station applications at frequencies from 1900 MHz to 2000 MHz. It operates with a drain-source voltage of 28 V and features an air cavity plastic earless flanged package (SOT1258-1). The device provides a typical power gain of 16.9 dB, drain efficiency of 42.5%, and peak output power of 300 W under 1-carrier W-CDMA test conditions. It includes integrated ESD protection and is internally matched for ease of use.

Feature Summary

  • Excellent ruggedness capable of withstanding high load mismatch in Doherty operation
  • Low thermal resistance providing excellent thermal stability
  • Lower output capacitance for improved performance in Doherty applications
  • Designed for low memory effects providing excellent digital pre-distortion capability

Applications

  • RF power amplifiers for base stations
  • Multi carrier applications in the 1900 MHz to 2000 MHz frequency range

Procurement Notes

Verify component authenticity by checking the manufacturer's official documentation against the part number BLC8G20LS-310AV. Confirm the package version matches SOT1258-1. Ensure compliance with Directive 2002/95/EC regarding Restriction of Hazardous Substances. Validate handling procedures for ElectroStatic Discharge sensitivity as specified in the datasheet.

Selection Notes

Select this component for asymmetric Doherty amplifier designs operating between 1900 MHz and 2000 MHz. Consider the 28 V drain-source voltage requirement and the need for appropriate heat sinking due to the 0.30 K/W thermal resistance. Verify that the application supports the internal matching and ESD protection features provided by the device.

Part Context

This power LDMOS transistor is manufactured by Ampleon Netherlands B.V. It belongs to the BLC series of RF power transistors. The specific model BLC8G20LS-310AV is optimized for high-efficiency and ruggedness in cellular base station environments.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.

BLC8G20LS-310AVZBLC8G20LS-310AVZ
$65.63
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