BLC8G24LS-241AVZ

Overview

The BLC8G24LS-241AV is a 240 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 2300 MHz to 2400 MHz frequency range. It operates at a drain-source voltage of 28 V with a junction temperature limit of 225 °C and thermal resistance of 0.26 K/W. The device delivers 56 W average output power with 43% drain efficiency under 1-carrier W-CDMA conditions, achieving -29 dBc ACPR. Pulsed CW testing at 2400 MHz yields up to 290 W output power at 3 dB gain compression.

Feature Summary

• Asymmetric design optimized for high-efficiency operation across the 2300 MHz to 2400 MHz band
• Low memory effects enabling excellent digital pre-distortion capability
• Internally matched structure for simplified integration
• Integrated ESD protection compliant with C2A and HBM Class 2 standards

Applications

• RF power amplifiers for base stations
• Multi-carrier applications in the 2300 MHz to 2400 MHz frequency range

Procurement Notes

Verify component authenticity through authorized Ampleon distributors or direct manufacturer channels. Confirm RoHS compliance status and check for updated revision history documents. Ensure handling procedures strictly follow ESD precautions due to the device's sensitivity. Validate that the specific package version matches the required SOT1252-1 specifications before finalizing orders.

Selection Notes

Select this component for asymmetric Doherty amplifier architectures requiring high linearity and efficiency in cellular base stations. Evaluate impedance matching networks against the provided load-pull data tables for both main and peak devices. Consider the 225 °C maximum junction temperature when designing thermal management solutions to ensure long-term reliability under continuous operation.

Part Context

This part belongs to the Ampleon Power LDMOS transistor family, specifically engineered for broadband RF power amplification. It utilizes an air cavity plastic earless flanged package (SOT1252-1) to facilitate efficient heat dissipation from the drain connected to the flange. The device integrates separate main and peak amplifier sections within a single silicon die to support complex modulation schemes.

Replacement Considerations

Consult official Ampleon documentation for verified substitute part numbers. Do not assume functional equivalence with other LDMOS transistors without validating pinout compatibility, electrical characteristics, and thermal performance against the original specifications.