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The BLC8G27LS-60AVZ is a 60 W LDMOS asymmetrical Doherty power transistor designed for base station applications in the 2300 MHz to 2690 MHz frequency range. It features a dual N-channel configuration with a drain-source breakdown voltage of 65 V and operates at a standard test voltage of 28 V. The device utilizes an air cavity plastic earless flanged package (SOT1275-3) with six leads, including dedicated video decoupling pins. Typical performance includes a power gain of 15.2 dB and a drain efficiency of 47% under 1-carrier W-CDMA conditions.
Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct package variant selection. Confirm RoHS compliance status and check for any regional distribution restrictions prior to finalizing procurement orders.
Select this component for designs requiring high ruggedness and low thermal resistance in Doherty configurations. Ensure the application supports the required 28 V operating voltage and that the PCB layout accommodates the SOT1275-3 flanged package dimensions.
This part belongs to Ampleon's LDMOS power transistor portfolio, optimized for wireless infrastructure. It serves as a specialized solution for modern cellular base stations, offering improved performance metrics compared to standard RF MOSFETs when utilized in linearized amplifier topologies.
Consult official documentation for verified substitutes such as the BLC8G27LS-60AVH or other series members within the same product family before considering alternative manufacturers.
The device demonstrates a typical video bandwidth of 100 MHz in a Doherty demo board configuration at 2600 MHz.
It can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified operating conditions.
The absolute maximum junction temperature rating is 225 °C.