BLC8G27LS-60AVZ

BLC8G27LS-60AVZ

$37.88
  • Description:RF MOSFET SOT1275-3
  • Series:*

SKU:35e70b212a32 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET SOT1275-3
  • Series:*
  • Mfr:Ampleon USA Inc.
  • Package:Bulk,Tray
  • Technology:-
  • Frequency:-
  • Gain:-
  • Voltage - Test:-
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:-
  • Power - Output:-
  • Voltage - Rated:-
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1275-3
  • Supplier Device Package:SOT-1275-3
  • Configuration:-

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BLC8G27LS-60AVZ

Overview

The BLC8G27LS-60AVZ is a 60 W LDMOS asymmetrical Doherty power transistor designed for base station applications in the 2300 MHz to 2690 MHz frequency range. It features a dual N-channel configuration with a drain-source breakdown voltage of 65 V and operates at a standard test voltage of 28 V. The device utilizes an air cavity plastic earless flanged package (SOT1275-3) with six leads, including dedicated video decoupling pins. Typical performance includes a power gain of 15.2 dB and a drain efficiency of 47% under 1-carrier W-CDMA conditions.

Feature Summary

  • Designed specifically for asymmetrical Doherty amplifier architectures to enhance efficiency and linearity.
  • Features integrated ESD protection and internal matching for simplified circuit integration.
  • Incorporates dedicated video decoupling leads to support wide bandwidth requirements.
  • Engineered for low memory effects to facilitate effective digital pre-distortion.

Applications

  • RF power amplification for LTE base stations
  • Multi-carrier applications within the 2300 MHz to 2690 MHz spectrum

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct package variant selection. Confirm RoHS compliance status and check for any regional distribution restrictions prior to finalizing procurement orders.

Selection Notes

Select this component for designs requiring high ruggedness and low thermal resistance in Doherty configurations. Ensure the application supports the required 28 V operating voltage and that the PCB layout accommodates the SOT1275-3 flanged package dimensions.

Part Context

This part belongs to Ampleon's LDMOS power transistor portfolio, optimized for wireless infrastructure. It serves as a specialized solution for modern cellular base stations, offering improved performance metrics compared to standard RF MOSFETs when utilized in linearized amplifier topologies.

Replacement Considerations

Consult official documentation for verified substitutes such as the BLC8G27LS-60AVH or other series members within the same product family before considering alternative manufacturers.

FAQ

What is the typical video bandwidth capability?

The device demonstrates a typical video bandwidth of 100 MHz in a Doherty demo board configuration at 2600 MHz.

How does the device handle load mismatches?

It can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified operating conditions.

What is the maximum junction temperature rating?

The absolute maximum junction temperature rating is 225 °C.

BLC8G27LS-60AVZBLC8G27LS-60AVZ
$37.88
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